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Alpha & Omega Semiconductor AO4801 MOSFET 2P-CH 30V 5A 8SOIC
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Alpha & Omega Semiconductor AO4801A MOSFET 2P-CH 30V 5A 8SOIC
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DigiKey	AO4801A	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.2388	Buy Now
Alpha & Omega Semiconductor AO4801L MOSFET 2P-CH 30V 5A 8SOIC
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Alpha & Omega Semiconductor AO4801AL MOSFET 2P-CH 30V 5A 8SOIC
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Alpha & Omega Semiconductor AO4801AS MOSFET 2P-CH 30V 5A 8SOIC
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AO4801 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AO4801		Alpha & Omega Semiconductor	Dual P-Channel Enhancement Mode Field Effect Transistor		Original	PDF
AO4801		Alpha & Omega Semiconductor	General Purpose - 30V P-Channel MOSFET (Replacement AO4801A)		Original	PDF
AO4801A		Alpha & Omega Semiconductor	Dual P-Channel Enhancement Mode Field Effect Transistor		Original	PDF
AO4801A		Alpha & Omega Semiconductor	General Purpose - 30V P-Channel MOSFET		Original	PDF
AO4801AL		Alpha & Omega Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 5A 8SOIC		Original	PDF
AO4801AL_001		Alpha & Omega Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 5A 8SOIC		Original	PDF
AO4801L		Alpha & Omega Semiconductor	Dual P-Channel Enhancement Mode Field Effect Transistor		Original	PDF

AO4801 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AO4801 Abstract: No abstract text available Text: AO4801 30V P-Channel MOSFET General Description Product Summary The AO4801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a	Original	PDF	AO4801 AO4801
AO4801AL Abstract: 933 SOIC8 Text: AO4801AL 30V P-Channel MOSFET General Description Product Summary The AO4801AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.	Original	PDF	AO4801AL AO4801AL 933 SOIC8
AO4801A Abstract: No abstract text available Text: AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.	Original	PDF	AO4801A AO4801A
AO4801A Abstract: No abstract text available Text: AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free	Original	PDF	AO4801A AO4801A
AO4801 Abstract: No abstract text available Text: AOS Semiconductor Product Reliability Report AO4801/AO4801L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Apr 25, 2006 1 This AOS product reliability report summarizes the qualification result for AO4801. Accelerated	Original	PDF	AO4801/AO4801L, AO4801. AO4801 10-5eV Mil-Std-105D
AO4801 Abstract: AO4801L Text: AO4801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a	Original	PDF	AO4801 AO4801 AO4801L
AON6704L Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower	Original	PDF	O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Untitled Abstract: No abstract text available Text: Dual P-channel MOSFET ELM14801AB-N •General description ■Features ELM14801AB-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)	Original	PDF	ELM14801AB-N ELM14801AB-N tempLM14801AB-N
STM9435 Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC	Original	PDF	STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
AO4946 Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466 Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22	Original	PDF
AO4403 Abstract: 4801 soic8 AO4400 Text: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO4403 AO4403 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 4801 soic8 AO4400
NPN transistor c828 Abstract: c828 npn transistor ST 950403 IT8282M zener st c903 d 9329 k8m800 ISS355 zener smd diode h9 st c632 Zener diode Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : AN5_K8_VIA K8N800+VT8235CE 2. PCI & IRQ & DMA Description : Version : 0.5 PP 3. Block Diagram :	Original	PDF	K8N800 VT8235CE K8N800 NPN transistor c828 c828 npn transistor ST 950403 IT8282M zener st c903 d 9329 k8m800 ISS355 zener smd diode h9 st c632 Zener diode
Untitled Abstract: No abstract text available Text: デュアルパワー P チャンネル MOSFET ELM14801AB-N •概要 ■特長 ELM14801AB-N は低入力容量低電圧駆動、低・ Vds=-30V オン抵抗という特性を備えた大電流デュアルパワー・ Id=-5A Vgs=-10V MOSFET です。	Original	PDF	ELM14801AB-N
semiconductor cross reference Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC	Original	PDF	STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference

AO4402 Abstract: AO4800 mpf201 AO4400 AO4401 Text: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO4402 AO4402 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 AO4800 mpf201 AO4400 AO4401
ELM14801AB Abstract: No abstract text available Text: 双 P 沟道 MOSFET ELM14801AB-N •概要 ■特点 ELM14801AB-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-5A Vgs=-10V ·Rds(on) < 48mΩ (Vgs=-10V) ·Rds(on) < 57mΩ (Vgs=-4.5V)	Original	PDF	ELM14801AB-N ELM14801AB
Untitled Abstract: No abstract text available Text: Dual P-channel MOSFET ELM54801AA-N •General description ■Features ELM54801AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)	Original	PDF	ELM54801AA-N ELM54801AA-N M54801AA-N
AO4400 Abstract: AO4401 AO4800 Text: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in	Original	PDF	AO4800 AO4800 AO4400 AO4401 AO4801 AO4700 AO4701 AO4400 AO4401