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    AMP. MOSFET 500 WATT Search Results

    AMP. MOSFET 500 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    AMP. MOSFET 500 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTP1N50E mtp1n
    Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to


    Original     		PDF MTP1N50E r14525 MTP1N50E/D AN569 MTP1N50E mtp1n

    Untitled

    Abstract: No abstract text available
    Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to


    Original     		PDF MTP1N50E O-220 r14525 MTP1N50E/D

    1N50E

    Abstract: t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E
    Text: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD1N50E r14525 MTD1N50E/D 1N50E t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E

    t1n50e

    Abstract: 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310
    Text: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD1N50E r14525 MTD1N50E/D t1n50e 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310

    transistor 1 j42

    Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation


    Original     		PDF UF281 lF281OP transistor 1 j42 transistor j42 nj TRANSISTOR 2L43

    UF28156

    Abstract: UF2815B L5 mosfet
    Text: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation


    Original     		PDF UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet

    3F TRANSISTOR

    Abstract: F2801
    Text: XY an AMP company r = RF MOSFET Power Transistor, 100 - 500 MHz 1 W, 28V UF2801 KI v2.00 Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Lower Noise Floor l 100 MHz to 500 MHz Operation l Common Source TO39 Package Configuration


    Original     		PDF UF2801 F2801 3F TRANSISTOR

    Transistor Equivalent list

    Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation


    Original     		PDF UF2805B 68Dpf 82Opf Transistor Equivalent list "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos

    transistor v2w

    Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
    Text: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor


    Original     		PDF LF281 rt-l-970' transistor v2w transistor C 2240 TRANSISTOR 500 PL031 TT 2240

    UF284OP

    Abstract: No abstract text available
    Text: an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF284OP Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Absolute Maximum Ratings at 25°C


    Original     		PDF UF284OP lOOW42SV. wlF25oNNsmr-RmDco~ lsTum5ra22AvGvw UF284OP

    UF2815OJ

    Abstract: No abstract text available
    Text: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C


    Original     		PDF UF2815OJ -65to UF2815OJ

    pulse transformer bv 070

    Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
    Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation


    Original     		PDF UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer

    25 ohm semirigid

    Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
    Text: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l


    Original     		PDF UF2840G 1000pF t-500pF 25 ohm semirigid capacitor 50uf UF2840G resistor 1.2k capacitor J 400

    UF28100M

    Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C


    Original     		PDF UF281 73XD1B2-03 UF28100M UF281OOM Amp. mosfet 500 watt ISS135 S80E

    mosfet 24n50

    Abstract: mosfet 24n50 transistor equivalent IXTH24N50 SSDI SFF
    Text: SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET DESIGNER’S DATA SHEET Features:


    Original     		PDF SFF24N50/3 SFF24N50/3T IXTH24N50 Rating125 F00175E mosfet 24n50 mosfet 24n50 transistor equivalent SSDI SFF

    IRF450

    Abstract: mosfet IRF450
    Text: PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 12 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate


    OCR Scan     		PDF 670-SSDI SFF450i IRF450 25q9c F00095 mosfet IRF450

    IXTH24N50

    Abstract: SFF24N50B
    Text: PRELIMINARY SFF24N50B SOLID STATE DEVICES, INC 11 • 11 24 AMP 500 VOLTS 0.23 a N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poiysiiicon gate Low RDS on and high transconductance Excellent high temperature stability Very fast switching speed


    OCR Scan     		PDF 670-SSDI IXTH24N50 SFF24N50B SFF24N50B

    diode A249

    Abstract: 2E12 3E12 SFFD450M SFFR450M frf450 irfm7450
    Text: S I PRELIMINARY SFFR450M SFFD450M SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 10 AMP 500 VOLTS 0.60 Q RADIATION HARDENED N-CHANNEL MOSFET # Designer’s Data Sheet FEATURES: SFFR450M: 100KRad(Si) Gamma


    OCR Scan     		PDF 670-SSDI IRFM7450/8450, FRF450 SFFR450M SFFD450M diode A249 2E12 3E12 SFFD450M irfm7450

    IRF430

    Abstract: No abstract text available
    Text: PRELIMINARY SFF430/5 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 4.5 AMP 500 VOLTS Designer’s Data Sheet 1.6 Q N-CHANNEL POWER MOSFET FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		PDF 670-SSDI SFF430/5 IRF430

    IRF430

    Abstract: No abstract text available
    Text: SsDII PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 4.5 AMP 500 VOLTS 1.6 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		PDF 670-SSDI IRF430 Volta50

    IRF440

    Abstract: SFF440C 0-85Q
    Text: Sspii PRELIMINARY SFF440C SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■


    OCR Scan     		PDF 670-SSDI SFF440C IRF440 O-254C O-254 F00093 SFF440C 0-85Q

    IRF450

    Abstract: ID72
    Text: PRELIMINARY SFF450/61 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 13 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■


    OCR Scan     		PDF 670-SSDI SFF450/61 IRF450 ID72

    IRF440

    Abstract: SFF440M
    Text: PRELIMINARY A SFF440M /SFF440Z SOLID STATE DEVICES, INC — 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate


    OCR Scan     		PDF 670-SSDI IRF440 SFF440M /SFF440Z O-254 O-254Z O-254Z

    IRF440

    Abstract: SFF440
    Text: §s§i PRELIMINARY SFF440 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: • • • • • • •


    OCR Scan     		PDF SFF440 670-SSDI IRF440 33BtJXff F00083 SFF440