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    AM28F010-200 REV I Search Results

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    AM28F010

    Abstract: No abstract text available
    Text: FINAL Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase


    Original     		PDF Am28F010 32-Pin

    AM28F020

    Abstract: No abstract text available
    Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		PDF Am28F020 32-pin

    AM28F010A

    Abstract: TSR032-32-Pin
    Text: FINAL Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		PDF Am28F010A 32-pin TSR032-32-Pin

    A25L020AO-F

    Abstract: rtd2122l n25q128a13 cFeon EN25T80 EN25T80 wt61p8 A25L5120-F WT6702F pm25w020 GD25Q40
    Text: Page 1 of 69 Dataman-48XP/48UXP Version 8.10 <ALL> Device List ACTRANS AC25LV010 *8SO AC29LV400B *44PS AC29LV400T *44PS AC39LV010 *32PLCC AC39LV020 *32PLCC AC39LV040 *32PLCC AC39LV080 *40TS AC39LV512 *32PLCC AC39LV800 *48TS SDP-UNIV-16SO SDP-UNIV-44PS SDP-UNIV-44PS


    Original     		PDF Dataman-48XP/48UXP AC25LV010 AC29LV400B AC29LV400T AC39LV010 32PLCC AC39LV020 AC39LV040 A25L020AO-F rtd2122l n25q128a13 cFeon EN25T80 EN25T80 wt61p8 A25L5120-F WT6702F pm25w020 GD25Q40

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 |is typical byte-program — 100 |iA maximum standby current


    OCR Scan     		PDF 32-pin TS032â 16-038-TSOP-2 Am28F010 TSR032â TSR032

    EE-21

    Abstract: 28F010P
    Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current


    OCR Scan     		PDF Am28F010 32-Pin D55752fl D3273D EE-21 28F010P

    Untitled

    Abstract: No abstract text available
    Text: FI NA! AMDB Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current


    OCR Scan     		PDF Am28F010 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: F IN A L AM Dû A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance — 70 ns maximum access time ■ CMOS Low power consumption — One second typical chip-erase ■ — 10


    OCR Scan     		PDF 32-Pin Am28F010

    Untitled

    Abstract: No abstract text available
    Text: & Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ — 90 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		PDF Am28F010 32-pin 257S2Ã

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — One second typical chip-erase — 70 ns maximum access time ■ CMOS Low power consumption Flashrite Programming


    OCR Scan     		PDF Am28F010 32-pin

    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


    OCR Scan     		PDF G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 ps typical byte-program — 100 pA maximum standby current


    OCR Scan     		PDF 32-pin Am28F010

    Untitled

    Abstract: No abstract text available
    Text: Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current


    OCR Scan     		PDF Am28F010 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current


    OCR Scan     		PDF 32-Pin 28F010

    Untitled

    Abstract: No abstract text available
    Text: AMENDMENT AMD£I Am28F01 OA Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This am endm ent supersedes inform ation regarding the A m 28 F 010A device in the 1996 Flash P roducts Data B ook/H andbook, PID 11796D. This docum ent includes re p la ce m e n t p a g e s fo r the A m 2 8 F 0 1 0 A d a ta sheet,


    OCR Scan     		PDF Am28F01 11796D. 16778C. Am28F010A IN3064 16778C 16778C-21

    SMD A7H

    Abstract: qml-38535 MD28F01090 MR28F01025
    Text: _ RE V I S I O N S _ _ _ L T R _ D E S C R I P T I O N _ DA T E VR-HO-DA _ A P P R O V E D A U p d a t e d b o i l e r p l a t e . A d d e d dev i c e t y p e s 09 13. M o v e d e n d u r a n c e and d a t a re t e n t i o n t e s t i n g


    OCR Scan     		PDF

    AM28F020

    Abstract: No abstract text available
    Text: f !NAL AMDH Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase


    OCR Scan     		PDF Am28F020 32-pin

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance


    OCR Scan     		PDF Am28F010A 32-pin

    Untitled

    Abstract: No abstract text available
    Text: FINAL AM D Ü Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access tim es as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■


    OCR Scan     		PDF Am28F010A 32-pin

    Untitled

    Abstract: No abstract text available
    Text: a Am 28 F 010 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time


    OCR Scan     		PDF 32-Pin Am28F010A