ALR TRANSISTOR Search Results

harris transistors

Abstract: D40D1 D0407 D40-D
Contextual Info: HARRIS SEMICOND SECTOR SbE D • 43G2271 00407bM 4^7 « H A S D40D Series File Number 2334 -V-33-Oe 1-Ampere Silicon N-P-N Power Transistors Complementary to the D41D Series Features: • High free-alr power dissipation • Low collector saturation voltage 0.5V typ. @ 1.0A Iq

TRANSISTOR LD30

Abstract: KJ01 ctm 2s rilg u421u
Contextual Info: SDE J> D 68 IIFC 4A2bflflfl 0000438 75*3 U421, U422, U423, U424, U425, U426 7 - 3 1- 2 INTER F E T CORP DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • VERY HIGH INPUT IMPEDANCE DIFFERENTIAL AMPLIFIERS * ELECTROMETERS Absolute maximum ratings at 25°C freo-alr temperature.

Contextual Info: P ow er Transistors HARRI S S E M I C O N D S E CT OR D40D Series 27E D • M302271 GQ2G27b 3 ■¡HAS • File Number 15.2 " 1 3 3 -0 5 - 1-Ampere Silicon N-P-N Power Transistors Com plem entary to the D41D Series TERMINAL DESIGNATIONS Features: • High free-alr power dissipation

LPG GAS SENSOR

Abstract: CO Gas sensor gas sensor gas module sensor CO Sensor "Co Sensor" alcohol sensor module Hair Curler LPG GAS SENSOR application basic stamp BS2 ic
Contextual Info: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 CH4 (Methane) Gas Sensor Module (#27930) CO (Carbon Monoxide) Gas Sensor Module (#27931)

AM336-1

Abstract: ZPD 6.8 ITT ZPD ITT ZPD ITT 6,8 ITT ZPD 4.7 ZPD ITT diode 3 3 ZPD 15 ITT ZPD ITT 10 Zener ZPD 24 blue BST60
Contextual Info: IC FOR OPTO DETECTOR AM 336 FEATURES GENERAL DESCRIPTION • 2 Operation Modes Proximity and Barrier • External Synchronisation in the Barrier Mode • Ambient Light Rejection • Adjustable Threshold and Hysteresis • Normally Open and Normally Closed

2sa174

Abstract: 2SA1748 2SC4562
Contextual Info: Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 1.6±0.15 Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –50

schematic ultrasonic fogger

Abstract: acoustic filter 40khz CAR alarm INTEGRATED CIRCUIT 40KHZ ULTRASONIC transducers DA5546 fogger car intrusion ultrasonic sensor vehicle ultrasonic sensor intrusion alarm 40KHz ultrasonic interface 40khz ULTRASOUND DRIVER
Contextual Info: Mixed-Signal ASICs Introduction The mixed signal ASIC, as its name implies, combines elements of the analog world and the digital world into one customized IC. The ability to combine analog functions of all levels of complexity onto the same chip as the more

2SA1748

Abstract: 2SC4562
Contextual Info: Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob.

2SA1748

Abstract: 2SC4562
Contextual Info: Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 1.6±0.15 Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –50

Contextual Info: DATA SHEET MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Collector current IC = -200mA .103(2.60) • Both normal and Pb free product are available : .047(1.20)

2N1420

Abstract: 2N956 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731
Contextual Info: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

Contextual Info: DATA SHEET MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 200mA • Both normal and Pb free product are available : .047(1.20)

M2A MARKING SOT-23

Abstract: M2A transistor 1N914 MMBT2222A TRANSISTOR NPN SI SOT-23 ROHS M2A SOT23 marking M2A
Contextual Info: DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives .047(1.20)

s2A PART MARKING SOT-23

Abstract: transistor SOT23 YC 30 MARKING S2A SOT-23 1N916 MMBT3906 YC sot 23 s2A SOT23
Contextual Info: DATA SHEET MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Collector current IC = -200mA .103(2.60) • Both normal and Pb free product are available : .047(1.20)

Contextual Info: DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 600mA • Both normal and Pb free product are available : .047(1.20)

M2A MARKING SOT-23

Abstract: 1N914 MMBT2222A MARKING M2A SOT-23 sot23 m2a mmbt2222a m2a
Contextual Info: DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) .047(1.20) • Collector current IC = 600mA • Pb free product are available : 99% Sn above can meet Rohs

2N117

Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
Contextual Info: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory

847C

Abstract: 848B BC846 BC847 BC848 BC849 BC850 C846a c847b 849B
Contextual Info: BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 225 mWatts CURRENT FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives

847C

Abstract: 848B BC846 BC847 BC848 BC849 BC850
Contextual Info: BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 225 mWatts CURRENT SOT- 23 Unit: inch mm FEATURES • General purpose amplifier applications .056(1.40) • Pb free product are available : 99% Sn above can meet Rohs

847C

Abstract: BC846W BC847W BC848W BC849W BC850W
Contextual Info: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • Both normal and Pb free product are available :

Contextual Info: DATA SHEET BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 225 mWatts CURRENT SOT- 23 Unit: inch mm FEATURES • General purpose amplifier applications .056(1.40) • Both normal and Pb free product are available :