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    BC849W Search Results

    BC849W Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC849W Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BC849W Infineon Technologies PNP Silicon AF Transistors Original PDF
    BC849W NXP Semiconductors NPN general purpose transistors Original PDF
    BC849W Philips Semiconductors NPN general purpose transistors Original PDF
    BC849W Philips Semiconductors NPN General Purpose Transistor Original PDF
    BC849W Siemens Cross Reference Guide 1998 Original PDF
    BC849W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC849WT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BC849W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Text: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		BC846W. BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323


    OCR Scan     		BC849W; BC850W OT323 MBC670 BC849W BC849BW; BC850BW PDF

    BC849BW

    Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W


    Original     		M3D102 BC849W; BC850W OT323 BC859W BC860W. SCA63 115002/00/03/pp8 BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC860W PDF

    BC846W

    Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW OT323 BC846W BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W PDF

    BC846AW

    Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W BC849B
    Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1 ±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]


    Original     		BC846W BC849W OT-323 UL94V-0 BC847W BC848W BC846AW BC846W BC847AW BC847W BC848W BC849W BC856W BC859W BC849B PDF

    847C

    Abstract: BC846W BC847W BC848W BC849W BC850W
    Text: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • Both normal and Pb free product are available :


    Original     		BC846W BC847W BC848W BC849W BC850W OT-323 100mA OT-323, MIL-STD-202, 846AW 847C PDF

    Untitled

    Abstract: No abstract text available
    Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]


    Original     		BC846W BC849W OT-323 UL94V-0 BC847W BC848W PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Text: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		BC846W. BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    BC850AW

    Abstract: BC847W BC846AW BC846BW BC846W BC848W BC849W BC850BW BC850W
    Text: BC846W~850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50


    Original     		BC846W OT-323 BC846W BC847W BC848W BC849W BC850W BC850AW BC847W BC846AW BC846BW BC848W BC849W BC850BW BC850W PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 1999 Apr 12 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING


    Original     		M3D102 BC849W; BC850W OT323 BC859W BC860W. 115002/00/03/pp7 PDF

    D024-M

    Abstract: D024M70 MARKING J1A BC849BW BC849CW BC849W BC850BW BC850CW BC850W SOT323 Marking LE
    Text: bbSB^l Philips Semiconductors ODSMMbö T7T IAPX NPN general purpose transistor amer FEATURES philips Product specification BC849W; BC850W /d i s c r e t e b7E ]> PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323


    OCR Scan     		0D24Mbà BC849W; BC850W OT323 -SOT323 BC849W: BC849BW: BC849CW: BC850W: BC850BW: D024-M D024M70 MARKING J1A BC849BW BC849CW BC849W BC850BW BC850CW BC850W SOT323 Marking LE PDF

    BC transistor series

    Abstract: BC849W BC856W BC857W BC858W BC859W transistor BC SERIES
    Text: BC856W,BC857W,BC858W,BC859W SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 200 mWatts CURRENT 30/45/65 Volts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Collector current IC = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series


    Original     		BC856W BC857W BC858W BC859W OT-323 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC OT-323, BC transistor series transistor BC SERIES PDF

    Untitled

    Abstract: No abstract text available
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW BC856BW PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC849W; BC850W PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector other audio-frequency equipment.


    OCR Scan     		OT323 BC859W BC860W. BC849W; BC850W BC849W BC849BW BC849CW BC850W BC850BW PDF

    Untitled

    Abstract: No abstract text available
    Text: BC849W Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30


    Original     		BC849W Freq100M PDF

    Q 817

    Abstract: str 450 a BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification


    Original     		M3D102 BC849W; BC850W OT323 BC859W BC860W. SCA54 117047/00/02/pp8 Q 817 str 450 a BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC860W PDF

    DIN 6784

    Abstract: MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W
    Text: BC856W.BC860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856BW OT323 DIN 6784 MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Text: BC846W~BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		BC846W BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Text: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		BC846W. BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    BC846AW

    Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W
    Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2011-07-07 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm]


    Original     		BC846W BC849W OT-323 UL94V-0 BC847W BC848W BC846AW BC846W BC847AW BC847W BC848W BC849W BC856W BC859W PDF

    BC849BW

    Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 1999 Apr 12 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES


    Original     		M3D102 BC849W; BC850W OT323 BC859W BC860W. 115002/00/03/pp7 BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC860W PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Text: BC846W~BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80


    Original     		BC846W BC850W OT-323 BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    C847B

    Abstract: BC846W BC847W BC848W BC849W BC850W sot-323 marking 46B
    Text: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		BC846W BC847W BC848W BC849W BC850W OT-323 100mA 2002/95/EC OT-323, MIL-STD-750, C847B sot-323 marking 46B PDF

    transistor Ba 850c

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC849W; BC850W NPN general purpose transistors FEATURES PINNING • Low curren t max. 100 mA


    OCR Scan     		BC849W; BC850W BC860W 115002/00/03/pp8 transistor Ba 850c PDF