Transistor C-1364
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD426203 TECHNICAL DATA DATA SHEET, 590 REV. Formerly Part Number SHD4263 BIPOLAR POWER TRANSISTOR DESCRIPTION: A SINGLE PNP POWER TRANSISTOR IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .
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SHD4263
SHD426203
O-257
Transistor C-1364
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD426301 TECHNICAL DATA DATA SHEET, 591 REV. Formerly Part Number SHD4261 BIPOLAR POWER TRANSISTOR DESCRIPTION: A SINGLE NPN POWER TRANSISTOR IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .
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SHD4261
SHD426301
O-257
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD426302 TECHNICAL DATA DATA SHEET, 968 REV. – Formerly part number SHD4262 BIPOLAR POWER TRANSISTOR DARLIGTON CONFIGURATION DESCRIPTION: A DARLINGTON NPN POWER TRANSISTOR IN A TO-257 PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .
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SHD4262
SHD426302
O-257
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD419302 TECHNICAL DATA DATA SHEET, 970, REV. – Formerly part number SHD4192 BIPOLAR POWER TRANSISTOR DARLIGTON CONFIGURATION DESCRIPTION: A DARLINGTON NPN POWER TRANSISTOR IN AN LCC-3P PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .
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SHD4192
SHD419302
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD426306 TECHNICAL DATA DATA SHEET 849 REV. A BIPOLAR POWER TRANSISTOR ADD SUFFIX “S” TO PART NUMBER FOR S-100 LEVEL SCREENING DESCRIPTION: A SINGLE NPN POWER TRANSISTOR IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).
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SHD426306
S-100
O-257
O-257
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD432103 TECHNICAL DATA DATASHEET 756, REV. – NPN MEDIUM POWER TRANSISTOR DESCRIPTION: DUAL NPN TRANSISTORS IN AN LCC-6 HERMETIC CERAMIC PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .
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SHD432103
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IRF720
Abstract: TA17404 TB334
Text: IRF720 Data Sheet January 2002 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF720
TA17404.
IRF720
TA17404
TB334
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irf710 datasheet
Abstract: IRF710 IRF710 and its equivalent TB334
Text: IRF710 Data Sheet January 2002 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF710
O-220AB
irf710 datasheet
IRF710
IRF710 and its equivalent
TB334
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IRF9510
Abstract: TA17541
Text: IRF9510 Data Sheet January 2002 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF9510
IRF9510
TA17541
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IRF610
Abstract: TB334 power MOSFET IRF610 IRF61
Text: IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF610
TA17442.
IRF610
TB334
power MOSFET IRF610
IRF61
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IRF510 application note
Abstract: transistor equivalent irf510 transistor irf510 IRF510 MOSFET irf510 pdf switch irf510 irf510 datasheet TA17441 TB334
Text: IRF510 Data Sheet January 2002 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF510
TA17441.
O-220AB
IRF510 application note
transistor equivalent irf510
transistor irf510
IRF510 MOSFET
irf510 pdf switch
irf510
irf510 datasheet
TA17441
TB334
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IRFP240
Abstract: irfp240 transistor TA17422 TB334
Text: IRFP240 Data Sheet January 2002 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP240
TA17422.
O-247
200opment.
IRFP240
irfp240 transistor
TA17422
TB334
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irf9620
Abstract: No abstract text available
Text: IRF9620 Data Sheet January 2002 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF9620
irf9620
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IRFP9240
Abstract: TA17522
Text: IRFP9240 Data Sheet January 2002 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP9240
IRFP9240
TA17522
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600V 2A MOSFET N-channel
Abstract: transistor irfbc40 IRFBC40 irfbc40 free download TB334
Text: IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFBC40
600V 2A MOSFET N-channel
transistor irfbc40
IRFBC40
irfbc40 free download
TB334
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400V voltage regulator
Abstract: diode 400V 4A DC DC converter 5v to 400V n-channel 250V power mosfet n-Channel mosfet 400v IRF820 IRF822 TB334
Text: IRF820 Data Sheet January 2002 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF820
TA17405.
400V voltage regulator
diode 400V 4A
DC DC converter 5v to 400V
n-channel 250V power mosfet
n-Channel mosfet 400v
IRF820
IRF822
TB334
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irf740 mosfet
Abstract: irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334
Text: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF740
O-220AB
irf740 mosfet
irf740 application note
irf740
MOSFET IRF740 as switch
TA17424
TB334
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IRFP440
Abstract: TA17425 TB334
Text: IRFP440 Data Sheet January 2002 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP440
TA17425.
O-247
IRFP440
TA17425
TB334
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IRFP9240
Abstract: IRFP9
Text: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP9240
TA17522.
IRFP9240
IRFP9
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2N2880-220M
Abstract: UA80
Text: 2N2880-220M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 FEATURES 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 NPN POWER SILICON TRANSISTOR FOR HI–REL APPLICATIONS • HERMETICALLY SEALED TO–220 METAL PACKAGE 1 2 3 • ALL LEADS ISOLATED FROM CASE
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2N2880-220M
O-257AB)
100mA
10MHz
2N2880-220M
UA80
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Untitled
Abstract: No abstract text available
Text: 2N2880-220M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 FEATURES 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 PNP POWER SILICON TRANSISTOR FOR HI–REL APPLICATIONS • HERMETICALLY SEALED TO–220 METAL PACKAGE 1 2 3 • ALL LEADS ISOLATED FROM CASE
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2N2880-220M
O-257AB)
100mA
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BLW78
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 HF/VHF power transistor BLW78 It has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange. DESCRIPTION N-P-N silicon planar epitaxial
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BLW78
OT121B
BLW78
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Untitled
Abstract: No abstract text available
Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european
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SD4933
2002/95/EEC
SD4933
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SD4933
Abstract: M177 With24-dB
Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european
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SD4933
2002/95/EEC
SD4933
M177
With24-dB
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