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    ALL DATASHEET HIGH POWER MOSFET TRANSISTOR Search Results

    ALL DATASHEET HIGH POWER MOSFET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3
    		Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK095V65Z5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 28 A, 0.095 Ω@10 V, High-speed diode, DFN 8×8 Visit Toshiba Electronic Devices & Storage Corporation
    TK9R7A15Q5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 49 A, 0.0097 Ω@10 V, High-speed diode, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK095A65Z5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 29 A, 0.095 Ω@10 V, High-speed diode, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK7R4A15Q5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 57 A, 0.0074 Ω@10 V, High-speed diode, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ALL DATASHEET HIGH POWER MOSFET TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP5N50 FDPF5N50T PDF

    FDPF4N60NZ

    Contextual Info: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP4N60NZ FDPF4N60NZ FDPF4N60NZ PDF

    FQH90N15

    Abstract: F109 FQA90N15 Audio Amplifire mosfet amplifire
    Contextual Info: QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQH90N15 FQA90N15 FQA90N15 F109 Audio Amplifire mosfet amplifire PDF

    fqt1n80

    Contextual Info: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQT1N80TF fqt1n80 PDF

    FDA20

    Abstract: *20N50F
    Contextual Info: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDA20N50 FDA20 *20N50F PDF

    fqb*7N65C

    Abstract: FQB7N65CTM
    Contextual Info: QFET FQB7N65C 650V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB7N65C FQB7N65C fqb*7N65C FQB7N65CTM PDF

    FQB9N50CF

    Abstract: FQB9N50CFTM
    Contextual Info: FRFET TM FQB9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS on = 0.85 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)


    Original     		FQB9N50CF FQB9N50CF FQB9N50CFTM PDF

    F109

    Abstract: FQA7N90M
    Contextual Info: QFET FQA7N90M 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA7N90M FQA7N90M F109 PDF

    FDA20N50

    Contextual Info: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)


    Original     		FDA20N50 FDA20N50 PDF

    FQA7N80C

    Abstract: F109
    Contextual Info: QFET FQA7N80C 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA7N80C FQA7N80C F109 PDF

    F109

    Abstract: FQA8N80
    Contextual Info: QFET FQA8N80 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA8N80 FQA8N80 F109 PDF

    FQB34P10TM_F085

    Contextual Info: QFET TM FQB34P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB34P10TM -100V, FQB34P10TM_F085 PDF

    FQB5N50CF

    Abstract: FQB5N50CFTF FQB5N50CFTM
    Contextual Info: FRFET TM FQB5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)


    Original     		FQB5N50CF FQB5N50CF FQB5N50CFTF FQB5N50CFTM PDF

    FDAF62N28

    Contextual Info: TM UniFET FDAF62N28 280V N-Channel MOSFET Features Description • 36A, 280V, RDS on = 0.051Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)


    Original     		FDAF62N28 FDAF62N28 PDF

    FDD6N25TM

    Abstract: FDD6N25 FDD6N25TF FDU6N25
    Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25 PDF

    FQB3N60C

    Abstract: FQB3N60CTM 3A, 50V BRIDGE
    Contextual Info: QFET TM FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB3N60C FQB3N60C FQB3N60CTM 3A, 50V BRIDGE PDF

    FDA15N65

    Contextual Info: UniFET TM FDA15N65 650V N-Channel MOSFET Features Description • 16A, 650V, RDS on = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 48.5 nC)


    Original     		FDA15N65 FDA15N65 PDF

    IRFY430C

    Abstract: IRFY430CM
    Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1291B HEXFET POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		1291B IRFY430CM IRFY430C IRFY430CM PDF

    FQB6N40CF

    Abstract: FQB6N40CFTM
    Contextual Info: FRFET TM FQB6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		FQB6N40CF FQB6N40CF FQB6N40CFTM PDF

    FQB8N60CF

    Abstract: FQB8N60CFTM
    Contextual Info: TM FRFET FQB8N60CF 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)


    Original     		FQB8N60CF FQB8N60CF FQB8N60CFTM PDF

    FDPF39N20

    Abstract: 200v mosfet FDP39N20
    Contextual Info: TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP39N20 FDPF39N20 FDPF39N20 200v mosfet PDF

    FDPF14N30

    Abstract: FDP14N30
    Contextual Info: UniFET TM FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP14N30 FDPF14N30 FDPF14N30 PDF

    FDP15N65

    Abstract: FDPF15N65
    Contextual Info: UniFET TM FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS on = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP15N65 FDPF15N65 FDPF15N65 PDF

    IRF510 application note

    Abstract: transistor equivalent irf510 transistor irf510 IRF510 MOSFET irf510 pdf switch irf510 irf510 datasheet TA17441 TB334
    Contextual Info: IRF510 Data Sheet January 2002 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		IRF510 TA17441. O-220AB IRF510 application note transistor equivalent irf510 transistor irf510 IRF510 MOSFET irf510 pdf switch irf510 irf510 datasheet TA17441 TB334 PDF