ADVANCED POWER TECHNOLOGY AVALANCHE ENERGY Search Results

SSF7508

Abstract: 3680 MOSFET 130a Gate Turn-off top switch to220 25Starting N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Contextual Info: SSF7508 Feathers: ID=130A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=80V

SSF3018

Abstract: TO220 Single 100V 60A Mosfet Avalanche diod p channel mosfet 100v top switch to220
Contextual Info: SSF3018 Feathers: ID=60A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=100V

SSF4004

Abstract: 25Starting pn junction diode N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V BV40V
Contextual Info: SSF4004 Feathers: ID=200A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=40V

Contextual Info: AUTOMOTIVE GRADE AUIRLR3636 HEXFET Power MOSFET Features l l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

TO220

Abstract: Single SSF3018D Avalanche diod p channel mosfet 100v
Contextual Info: SSF3018D Feathers: ID=80A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=100V

Contextual Info: AUTOMOTIVE GRADE AUIRLR3636 HEXFET Power MOSFET Features l l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

BR 1n70

Abstract: 4570 1N70 3VD186700YL
Contextual Info: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified

Contextual Info: 3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified

SSF*7510

Abstract: SSF7510 p-n junction diode ssf75 3150 mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 57AVDD
Contextual Info: SSF7510 Feathers: ID=75A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=75V Rdson=10mohm

Diode Equivalent 1N60

Abstract: 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan
Contextual Info: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified

ssf7509

Abstract: . SSF7509 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V ssf7509 equivalent MOSFET RDSon 0.008 ssf75
Contextual Info: SSF7509 Feathers: ID=80A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=80V Rdson=8mohm

Contextual Info: 3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified;

Contextual Info: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing

IRFZ48NL

Abstract: 1408B AN-994 IRFZ48NS
Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from

AUFR5410

Abstract: AUIRFR5410
Contextual Info: PD - 96344 AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

IRF540NL

Abstract: IRF540NS 3F smd transistor AN-994 IRF540N MOSFET IRF540n
Contextual Info: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing

1408B

Abstract: AN-994 IRFZ48NL IRFZ48NS IRFZ48N
Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from

5n80

Abstract: SMPS 30v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.

Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from

Contextual Info: PD - 97695A AUIRFL024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant

ssf6010

Abstract: BV-60 30V 60A power p MOSFET mosfet 20v 30A
Contextual Info: SSF6010 Feathers: ID =75A „ Advanced trench process technology BV=60V „ avalanche energy, 100% test Rdson=10mohm „ Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current N–Channel enhancement mode trench power

ssf6008

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 3150 mosfet
Contextual Info: SSF6008 Feathers: ID =84A „ Advanced trench process technology BV=60V „ avalanche energy, 100% test Rdson=8mΩ „ Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power

Contextual Info: SSF4006 Feathers: ID =160A „ Advanced trench process technology BV=40V „ avalanche energy, 100% test Rdson=0.005Ω „ Fully characterized avalanche voltage and current Description: The SSF4006 is a new generation of high voltage and low current N–Channel enhancement mode trench power

rl86

Abstract: SSF0115
Contextual Info: SSF0115 Feathers: ID =3A „ Advanced trench process technology BV=100V „ avalanche energy, 100% test Rdson=0.15Ω „ Fully characterized avalanche voltage and current Description: The SSF0115 is a new generation of high voltage and low current N–Channel enhancement mode trench power