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    BR 1n70

    Abstract: 1N70
    Text: 3VD186700YL 3VD186700YL 高压MOSFET芯片 描述 Ø 3VD186700YL为采用硅外延工艺制造的N沟道 增强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		3VD186700YL 3VD186700YL 3VD186700YLN 700VMOS O-251-3L BR 1n70 1N70 PDF

    BR 1n70

    Abstract: 4570 1N70 3VD186700YL
    Text: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified


    Original     		3VD186700YL 3VD186700YL O-251-3L BR 1n70 4570 1N70 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		3VD186700YL 3VD186700YL O-251-3L PDF