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    AD SMD TRANSISTOR Search Results

    AD SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX181BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX221SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 220ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE601SH1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
    DLW21SH670HQ2L
    		Murata Manufacturing Co Ltd CMC SMD 67ohm 320mA POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX800BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 80ohm POWRTRN Visit Murata Manufacturing Co Ltd

    AD SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ad marking

    Abstract: transistor smd marking AD 2SA1418
    Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1418 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		2SA1418 -250mA -25mA -50mA ad marking transistor smd marking AD 2SA1418 PDF

    Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original     		42N170A O-268 O-247) 728B1 PDF

    TO-268

    Abstract: BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint
    Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 28N170A IXBT 28N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		28N170A O-268 O-247) 728B1 123B1 728B1 065B1 TO-268 BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint PDF

    DS99004

    Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
    Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original     		6N170 O-247) 728B1 DS99004 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd PDF

    Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 15N170 IXBT 15N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original     		15N170 15N170 O-268 O-247 O-268 O-247) PDF

    Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		42N170 42N170 O-268 O-247 O-247) PDF

    ad 161 transistor

    Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		16N170 16N170 O-268 O-247 ad 161 transistor PDF

    752 J 1600 V CAPACITOR

    Abstract: 16N170 BiMOSFET
    Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		16N170 O-268 O-247 752 J 1600 V CAPACITOR 16N170 BiMOSFET PDF

    Contextual Info: Advance Technical Information IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		42N170A O-268 O-247) 728B1 PDF

    Contextual Info: Advance Technical Information VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original     		42N170A 42N170A O-268 O-247 O-268 O-247) 728B1 PDF

    BCX53

    Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
    Contextual Info: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60


    Original     		BCX51 BCX52 BCX53 BCX52 BCX51 BCX51-16 BCX53 marking AE smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16 PDF

    Contextual Info: Transistors IC SMD Type Product specification BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage BCX51 Symbol Rating Unit VCBO -45 V BCX52


    Original     		BCX51 BCX52 BCX53 BCX51 BCX52 BCX51-16 PDF

    42N170

    Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		42N170 42N170 O-268 O-247 PDF

    Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		42N170 O-247 PDF

    Contextual Info: Transistors IC SMD Type Product specification BCW60A/B/C/D SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 NPN epitaxial silicon transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		BCW60A/B/C/D OT-23 BCW60A BCW60B BCW60C BCW60D PDF

    SMD SMU10P05

    Abstract: SMD10P05
    Contextual Info: Tem ic SMD/SMU10P05 Semiconductors P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) IDa (A) r DS(on) ( ^ ) 0.28 -5 0 -1 0 TO-251 s o TO-252 o o G O- Drain Connected to Tab nr G D S Top View Order Number: SMD10P05 Ö D G D S Top View Order Number: SMU10P05


    OCR Scan     		SMD/SMU10P05 O-251 O-252 SMD10P05 SMU10P05 P-36851--Rev. 06-Jun-94 SMD SMU10P05 PDF

    Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous


    Original     		16N170A 16N170A O-268 O-247 PDF

    smd diode 819

    Abstract: 16N170A mos 1200v to-247
    Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20


    Original     		16N170A 728B1 123B1 728B1 065B1 smd diode 819 16N170A mos 1200v to-247 PDF

    16N170

    Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		16N170A 16N170A O-268 O-247 16N170 PDF

    16N170A

    Abstract: diode 22 161 smd
    Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		16N170A 16N170A diode 22 161 smd PDF

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel PDF

    IXBH28N170

    Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 60 A VCE sat = 3.5 V IXBH 28N170 IXBT 28N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		28N170 28N170 O-268 O-247 728B1 123B1 065B1 IXBH28N170 PDF

    10N170

    Contextual Info: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N170 10N170 O-268 O-247 728B1 123B1 065B1 PDF

    Contextual Info: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N170 728B1 123B1 728B1 065B1 PDF