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Teledyne Microwave Solutions ACPR109 RF Amplifier IC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	ACPR109					1 $3998.68 10 $1202.94 100 $1202.94 1000 $1202.94 10000 $1202.94	Buy Now
Master Electronics	ACPR109					1 $3998.68 10 $1202.94 100 $1202.94 1000 $1202.94 10000 $1202.94	Buy Now

ACPR10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RF35 Abstract: No abstract text available Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35	PDF
TRANSISTOR J601 Abstract: gp816 RF35 J2396 J249 Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249	PDF
BLF7G27LS-100 Abstract: BLF7G27L-100 ACPR1980 BLF7G27 flanged pin Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF7G27L-100; BLF7G27LS-100 ACPR885k IS-95 IS-95 BLF7G27L-100 7G27LS-100 BLF7G27LS-100 ACPR1980 BLF7G27 flanged pin	PDF
150P Abstract: BLF7G27LS-150P ACPR1980 ACPR885 Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF7G27L-150P; BLF7G27LS-150P IS-95 ACPR885k IS-95 BLF7G27L-150P 7G27LS-150P 150P BLF7G27LS-150P ACPR1980 ACPR885	PDF
BLF7G20L-90P Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70 Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70	PDF
BLF7G20LS-140P Abstract: 850 SMD Rework Station RF35 Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35	PDF
J122 SMD TRANSISTOR Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN	PDF
BU 0603 Abstract: 800B BLF6G15L 029-KW Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	BLF6G15L-250PBRN BU 0603 800B BLF6G15L 029-KW	PDF
Untitled Abstract: No abstract text available Text: BLF6G15L-40RN; BLF6G15LS-40RN Power LDMOS transistor Rev. 2 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	BLF6G15L-40RN; BLF6G15LS-40RN BLF6G15L-40RN 6G15LS-40RN	PDF
Untitled Abstract: No abstract text available Text: BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 01 — 3 May 2010 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27-100; BLF6G27LS-100 ACPR885k ACPR1980k ACPR10M BLF6G27-100 BLF6G27LS-100	PDF
Untitled Abstract: No abstract text available Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF7G27L-140; BLF7G27LS-140 IS-95 ACPR885k BLF7G27L-140 7G27LS-140	PDF
sot1121a Abstract: J226 SMD Text: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance	Original	BLF7G21L-160P; BLF7G21LS-160P BLF7G21L-160P 7G21LS-160P sot1121a J226 SMD	PDF
Untitled Abstract: No abstract text available Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF7G27L-135	PDF
SmD TRANSISTOR a75 Abstract: No abstract text available Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF7G20LS-140P ACPR400k ACPR600k SmD TRANSISTOR a75	PDF

Untitled Abstract: No abstract text available Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	BLF6G22L-40BN	PDF
Untitled Abstract: No abstract text available Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF7G27L-140; BLF7G27LS-140 ACPR885k IS-95 IS-95 BLF7G27L-140 7G27LS-140	PDF
Untitled Abstract: No abstract text available Text: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.	Original	BLF6G10L-40BRN	PDF
ATC100B Abstract: avx1206 BLF7G22L-130 BLF7G22LS-130 RO4350 transistor BC 185 Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 ATC100B avx1206 BLF7G22LS-130 RO4350 transistor BC 185	PDF
ACPR1980 Abstract: ACPR885 Text: BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 — 7 April 2011 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27L-50BN; BLF6G27LS-50BN BLF6G27L-50BN 6G27LS-50BN ACPR1980 ACPR885	PDF
TRANSISTOR j412 Abstract: J412 - TRANSISTOR SMD BLF6G38S-25 Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD	PDF
S-AU84 Abstract: ACPR10 Text: S-AU84 TOSHIBA RF Power Amplifier Module S-AU84 Power Amplifier Module for Japan cdmaOne Features • High output power : Po = 27.5 dBmW min · Low operating current : ICC = 415 mA (typ.) @Po = 27.5 dBmW VCC = 3.5 V 1X modulation : ICC = 140 mA (typ.) @Po = 17.0 dBmW	Original	S-AU84 S-AU84 ACPR10	PDF
helicoil 05 Abstract: No abstract text available Text: rev. 12/07 ARJ109 0.5 TO 200 MHz GULLWING CASCADABLE AMPLIFIER ARJ109 Typical Values High Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Second Order I.P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Third Order I.P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	ARJ109 10-pin helicoil 05	PDF
nxp power microwave transistor Abstract: ACPR885 RF35 ACPR10 Text: BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 — 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27-75; BLF6G27LS-75 ACPR885k ACPR1980k IS-95 BLF6G27-75 6G27LS-75 nxp power microwave transistor ACPR885 RF35 ACPR10	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160	PDF

ACPR10 Search Results

ACPR10 Price and Stock

Teledyne Microwave Solutions ACPR109

ACPR10 Datasheets Context Search

RF35

TRANSISTOR J601

BLF7G27LS-100

150P

BLF7G20L-90P

BLF7G20LS-140P

J122 SMD TRANSISTOR

BU 0603

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sot1121a

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SmD TRANSISTOR a75

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ATC100B

ACPR1980

TRANSISTOR j412

S-AU84

helicoil 05

nxp power microwave transistor

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