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    AB89 Search Results

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    AB89 Price and Stock

    TE Connectivity TRAB8903NP

    RF ANT 900MHZ DOME N FEM PAN MT
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    DigiKey TRAB8903NP Bulk 30 1
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    Mouser Electronics TRAB8903NP 34
    • 1 $64.71
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    Interstate Connecting Components TRAB8903NP
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    New Advantage Corporation TRAB8903NP 110 1
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    Sager TRAB8903NP 47 1
    • 1 $68.58
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    TE Connectivity AB8963

    RF ANT 933MHZ WHIP STR NMO BASE
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    TE Connectivity AB8963C

    RF ANT 933MHZ WHIP STR NMO BASE
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    Sager AB8963C 1
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    TE Connectivity AB8963S

    RF ANT 933MHZ WHIP STR NMO BASE
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    DigiKey AB8963S Bulk 12
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    Mouser Electronics AB8963S 5
    • 1 $41.36
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    • 1 $42.02
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    Anatech Electronics Inc AB897B481

    RF FILTER BANDPASS 897MHZ MODULE
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    DigiKey AB897B481 Box 1
    • 1 $510
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    AB89 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AB89 Nortel Networks 2.5 Gb/s Transimpedance Amplifier,3.3 Volt supply Original PDF
    AB8963 Laird Technologies IAS RF/IF and RFID - RF Antennas - RF ANT 933MHZ WHIP STR NMO BASE Original PDF
    AB8963C Laird Technologies IAS RF/IF and RFID - RF Antennas - RF ANT 933MHZ WHIP STR NMO BASE Original PDF
    AB8963CS Laird Technologies IAS RF/IF and RFID - RF Antennas - RF ANT 933MHZ WHIP STR NMO BASE Original PDF
    AB8963S Laird Technologies IAS RF/IF and RFID - RF Antennas - RF ANT 933MHZ WHIP STR NMO BASE Original PDF

    AB89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YA28

    Abstract: nortel demux nortel photodetector AB89 AC03 AC10 YA08 YA26 NORTEL photodiode AC10 post amplifier
    Text: Preliminary AB89 2.5 Gb/s Transimpedance Amplifier, 3.3 Volt supply Data Sheet Features Single +3.3 V power supply operation Input noise current = 330 nA rms when used with a 0.5 pF detector Transimpedance gain = 2.5 kΩ differential On-chip automatic gain control gives input


    Original
    PDF

    AB89

    Abstract: A0805735 QMV1155A-A nortel photodetector
    Text: Preliminary Data Sheet AB89 2.5 Gb/s Transimpedance Amplifier, 3.3 Volt supply Features Applications Single +3.3 V power supply operation SONET/SDH-based transmission systems, test equipment and modules Input noise current = 330 nA rms when used with a 0.5 pF detector


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4


    Original
    PDF W94AD6KB W94AD2KB A01-004

    A1833

    Abstract: No abstract text available
    Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4


    Original
    PDF MT46H128M16LF MT46H256M16L2 MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 A1833

    Untitled

    Abstract: No abstract text available
    Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07


    Original
    PDF HYB18M256320CFX HYE18M256320CFX 256-Mbit 18M256320CFX

    MT46H64M16

    Abstract: 6S55 MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original
    PDF MT46H64M16LF MT46H32M32LF 09005aef82ce3074 MT46H64M16 6S55 MT46H64M16LF

    s11 stopping compound

    Abstract: DEF01
    Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original
    PDF 128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features


    Original
    PDF 512Mb: MT48H32M16LF­ MT48H16M32LF 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF

    MT46H128M16

    Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


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    PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H128M16 MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball

    circuit diagram of ddr ram

    Abstract: HYB18M1G320BF
    Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00


    Original
    PDF HYB18M HYE18M 18M1G320BF HYB18M1G320BF HYE18M1G320BF 02022006-J7N7-GYFP circuit diagram of ddr ram

    AC10

    Abstract: YA28 AB89 AC89 STM-16 YA18 8AC10 Post amplifier Nortel OC-48 amplifiers
    Text: Data Sheet AC10 2.5 Gb/s Post Amplifier with Automatic Gain Control Features General description Single 3.3 V supply The Nortel Networks AC10 is an AGC amplifier aimed primarily at SONET OC-48 and SDH STM-16 systems. The device may be used in any Datacom application with input data rates up to


    Original
    PDF OC-48 STM-16 AC10 YA28 AB89 AC89 YA18 8AC10 Post amplifier Nortel OC-48 amplifiers

    1 into 16 demultiplexer circuit diagram using 1 i

    Abstract: 1 into 12 demultiplexer circuit diagram 1 into 16 demultiplexer circuit diagram ip 65 equipment qmv10 AB89 AC10 UT15 AC10 post amplifier YA18
    Text: YA20 2.5 Gb/s 1:16 Demultiplexer Data Sheet Features Data and clock inputs accept differential CML signals at up to 2.5 Gb/s Internally generated divide-by-16 clock and deserialized data delivered via PECL 100 k outputs Fully differential internal logic for


    Original
    PDF divide-by-16 16-bit 1 into 16 demultiplexer circuit diagram using 1 i 1 into 12 demultiplexer circuit diagram 1 into 16 demultiplexer circuit diagram ip 65 equipment qmv10 AB89 AC10 UT15 AC10 post amplifier YA18

    ELPIDA lpddr

    Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original
    PDF MT46H64M16LF MT46H32M32LF 09005aef83d9bee4 ELPIDA lpddr 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling

    1 into 16 demultiplexer circuit diagram using 1 i

    Abstract: 1 into 12 demultiplexer circuit diagram Nortel demux AB89 AC10 YA08 YA18 YA19 YA20 1 into 4 demultiplexer circuit diagram
    Text: YA20 2.5 Gb/s 1:16 Demultiplexer Data Sheet Features Data and clock inputs accept differential CML signals at up to 2.5 Gb/s Internally generated divide-by-16 clock and deserialized data delivered via PECL 100 k outputs Fully differential internal logic for


    Original
    PDF divide-by-16 16-bit 1 into 16 demultiplexer circuit diagram using 1 i 1 into 12 demultiplexer circuit diagram Nortel demux AB89 AC10 YA08 YA18 YA19 YA20 1 into 4 demultiplexer circuit diagram

    8C710

    Abstract: 7111-C
    Text: 1 1 1 1 1 1 1 234562781 1 1 1 1 AEF8C812 58 9 9 9 ABCDE9759F7E9 9


    Original
    PDF 1234516789ABC82DEFC81E 84AECD ABCDE9759F7 11111111111111111111111111111111111149AB1 436BD9F EC1B717B7 7107CE 14E91EC1E B17F8 E99701 8C710 7111-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original
    PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef8331b3e9 09005aef8331b3ce

    SE1031

    Abstract: SE1031W
    Text: SE1031W LightCharger 2.5 Gb/s Transimpedance Amplifier LP Final Applications § § § § § Product Description SONET/SDH-based transmission systems, test equipment and modules OC-48 fibre optic modules and line termination ATM over SONET/SDH Gigabit Ethernet


    Original
    PDF SE1031W OC-48 SE1031 54-DST-01 SE1031W

    a4503

    Abstract: AB8965CTS A8965CT AB-150 AB8063 A4903 AB4503CS A4303C
    Text: A-BASE BROAD BANDS & COLLINEARS The ANTENEX “A-Base” style antenna offers a durable mounting chassis that supports a wide range of rod styles, frequencies, and gain choices. The “A-Base” features rugged ABS body and a triple-chrome plated ferrule. The base contact is a highly reliable


    Original
    PDF AB4503CS UHF/800/900 17-7ph a4503 AB8965CTS A8965CT AB-150 AB8063 A4903 AB4503CS A4303C

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


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    PDF 512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 60-ball 90-ball 09005aef846e285e 512mb

    Untitled

    Abstract: No abstract text available
    Text: 1 123456789AB9ACDE6 1 6 6 A 1 F504546/42A 234156778913441 4&26 A B A!"#A$%A $& AF'CF 67 A3D($7(A!$*F$8A3D!A*F($76*$C7A $ A


    Original
    PDF 123456789AB9ACDE6 3A34526A 14B2/A A678A 123456789AB9ACDE 789AB9ACDE6 AD79BEA 06F22 123456789ABCDBE6F3A83D57 AB89BD9AB4

    T67M

    Abstract: ELPIDA mobile dram LPDDR2
    Text: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original
    PDF 512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 09005aef83dd2b3e T67M ELPIDA mobile dram LPDDR2

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original
    PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef82ce3074/Source: 09005aef82ce20c9

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original
    PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82d5d305/Source: 09005aef82d5d2e7

    a4503

    Abstract: A8063C
    Text: A-BASE The ANTENEX’ “A-Base”style antenna offers a durable mount­ ing chassis that supports a wide range of rod styles, frequencies, and gain choices. The “A-Base” features rugged ABS body and a triple-chrome plated ferrule. The base contact is a highly reliable


    OCR Scan
    PDF AB4503CS 17-7ph AB4703 AB4903 AB4063C AB4303C AB4503C AB4703C AB4903C a4503 A8063C