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Vishay Intertechnologies RDEF016075R00JFB00 RDEF0160 75 5% F B - Bulk (Alt: RDEF016075R00JFB00)
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Avnet Americas	RDEF016075R00JFB00	Bulk		6 Weeks	1	1 $340.56 10 $41.5008 100 $18.8 1000 $18.8 10000 $18.8	Buy Now
Mouser Electronics	RDEF016075R00JFB00					1 $316.83 10 $316.83 100 $316.83 1000 $316.83 10000 $316.83	Get Quote
Newark	RDEF016075R00JFB00	Bulk			1	1 $657.36 10 $78.89 100 $37.45 1000 $37.45 10000 $37.45	Buy Now
Vishay Intertechnologies RDEF017546R00JFB00 RDEF0175 46 5% F B - Bulk (Alt: RDEF017546R00JFB00)
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Vishay Intertechnologies RDEF01003K300JDB00 RDEF0100 3.3K 5% 1/4L B - Bulk (Alt: RDEF01003K300JDB00)
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Avnet Americas	RDEF01003K300JDB00	Bulk		6 Weeks	1	1 $340.56 10 $41.5008 100 $15.85 1000 $15.85 10000 $15.85	Buy Now
Mouser Electronics	RDEF01003K300JDB00					1 $340.1 10 $331.92 100 $331.92 1000 $331.92 10000 $331.92	Get Quote
Newark	RDEF01003K300JDB00	Bulk			1	1 $657.36 10 $78.89 100 $31.58 1000 $31.58 10000 $31.58	Buy Now
Vishay Intertechnologies RDEF0100500R0JDB00 RDEF0100 500 5% 1/4L B - Bulk (Alt: RDEF0100500R0JDB00)
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Avnet Americas	RDEF0100500R0JDB00	Bulk		6 Weeks	1	1 $340.56 10 $41.5008 100 $15.85 1000 $15.85 10000 $15.85	Buy Now
Newark	RDEF0100500R0JDB00	Bulk			1	1 $657.36 10 $78.89 100 $31.58 1000 $31.58 10000 $31.58	Buy Now
Vishay Intertechnologies RDEF01752R000JFBNI RDEF0175-NI 2 5% F B - Bulk (Alt: RDEF01752R000JFBNI)
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Avnet Americas	RDEF01752R000JFBNI	Bulk		6 Weeks	1	1 $352.44 10 $62.2512 100 $34.1625 1000 $34.1625 10000 $34.1625	Buy Now
Mouser Electronics	RDEF01752R000JFBNI					1 $316.83 10 $316.83 100 $316.83 1000 $316.83 10000 $316.83	Get Quote
Newark	RDEF01752R000JFBNI	Bulk			1	1 $657.36 10 $118.33 100 $68.06 1000 $68.06 10000 $68.06	Buy Now

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DEF01 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4	Original	W94AD6KB W94AD2KB A01-004	PDF
A1833 Abstract: No abstract text available Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4	Original	MT46H128M16LF MT46H256M16L2 MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 A1833	PDF
Untitled Abstract: No abstract text available Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07	Original	HYB18M256320CFX HYE18M256320CFX 256-Mbit 18M256320CFX	PDF
MT46H64M16 Abstract: 6S55 MT46H64M16LF Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)	Original	MT46H64M16LF MT46H32M32LF 09005aef82ce3074 MT46H64M16 6S55 MT46H64M16LF	PDF
s11 stopping compound Abstract: DEF01 Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)	Original	128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01	PDF
Untitled Abstract: No abstract text available Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features	Original	512Mb: MT48H32M16LF MT48H16M32LF 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF	PDF
Untitled Abstract: No abstract text available Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516445 • DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double	Original	DS05-11464-1E MB81EDS516445 MB81EDS516445 64-bit	PDF
MT46H128M16 Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4	Original	MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H128M16 MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball	PDF
circuit diagram of ddr ram Abstract: HYB18M1G320BF Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00	Original	HYB18M HYE18M 18M1G320BF HYB18M1G320BF HYE18M1G320BF 02022006-J7N7-GYFP circuit diagram of ddr ram	PDF
P-VFBGA 49 package Abstract: ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1 Text: November 2006 HYB18M512160BFX-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev. 1.10 HYB18M512160BFX 512-Mbit DDR Mobile-RAM HYB18M512160BFX-7.5, , Revision History: 2006-11, Rev. 1.10 Page Subjects major changes since last revision	Original	HYB18M512160BFX-7 512-Mbit HYB18M512160BFX 04052006-4SYQ-ZRN3 P-VFBGA 49 package ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1	PDF
ELPIDA lpddr Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)	Original	MT46H64M16LF MT46H32M32LF 09005aef83d9bee4 ELPIDA lpddr 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling	PDF
ccd image sensor sony Abstract: CXD3152AR CXD2463 85IRE code 4vw TO48 package DEF33 510X492 64pin sony digital cd CXD2463R Text: SONY CXD3152AR Signal Processor LSI for Single-chip CCD B/W Camera Description The CXD3152AR is a digital signal processor LSI for CCD black-and-white cameras. In addition to the CDS and AGC circuits of conventional analog signal processor LSI, this chip also features the ease of use	OCR Scan	CXD3152AR CXD3152AR 510H/760H 10-bit 135ms 64PIN LQFP-64P-L061 LQFP064-P-1010-AY 5-18nm ccd image sensor sony CXD2463 85IRE code 4vw TO48 package DEF33 510X492 64pin sony digital cd CXD2463R	PDF
h3ba omron timer Abstract: omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a Text: Cat. No. Z901-E1-05 SYSMAC NE1S Series NE1S-CPU01 Programmable Controller OPERATION MANUAL NE1S Series NE1S-CPU01 Programmable Controller Operation Manual Revised December 2006 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator	Original	Z901-E1-05 NE1S-CPU01 847-843-7900/Fax: NE1S-CPU01 h3ba omron timer omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a	PDF
CXD3152AR Abstract: DEF63 510H CXD2463R S-24C01B iriso CXD31 Text: CXD3152AR Signal Processor LSI for Single-chip CCD B/W Camera Description The CXD3152AR is a digital signal processor LSI for CCD black-and-white cameras. In addition to the CDS and AGC circuits of conventional analog signal processor LSI, this chip also features the ease of use	Original	CXD3152AR CXD3152AR 510H/760H 10-bit 64PIN LQFP-64P-L061 LQFP064-P-1010-AY DEF63 510H CXD2463R S-24C01B iriso CXD31	PDF

HYB18M512 Abstract: No abstract text available Text: . Home > Products > Packages > Green Products > Introduction On 27.01.2003 the European Parliament and the council adopted the directives: 2002/95/EC on the Restriction of the use of certain Hazardous Substances in electrical and electronic	Original	2002/95/EC 2002/96/EC 04032006-xxxx-xxxx 18M512160BF 512-Mbit P-VFBGA-60-1 HYB18M512	PDF
ADSP-2181 Abstract: GAL20V8B ADSP-2100 Family Assembler Tools MC6833x ADSP 2100 signal processor 74HCT244 ADSP-2100 AN-415 M68300 MC68300 Text: a ONE TECHNOLOGY WAY • P.O. AN-415 APPLICATION NOTE BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 ADSP-2181 IDMA Interface to Motorola MC68300 Family of Microprocessors INTRODUCTION The speed and mathematical capabilities of DSP processors,	Original	AN-415 ADSP-2181 MC68300 0x4000; 0002\n" 0000\n" E2125a GAL20V8B ADSP-2100 Family Assembler Tools MC6833x ADSP 2100 signal processor 74HCT244 ADSP-2100 AN-415 M68300 MC68300	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)	Original	128Mb: MT46H8M16LF MT46H4M32LF 09005aef8331b3e9 09005aef8331b3ce	PDF
ICX258AL Abstract: EIA/CCIR 510H CXD2463R CXD3152R CXD31 DEF33 Text: CXD3152R Signal Processor LSI for Single-chip CCD B/W Camera Description The CXD3152R is a digital signal processor LSI for CCD black-and-white cameras. In addition to the CDS and AGC circuits of conventional analog signal processor LSI, this chip also features the ease of use	Original	CXD3152R CXD3152R 510H/760H 10-bit 135ms 64PIN LQFP-64P-L061 LQFP064-P-1010-AY ICX258AL EIA/CCIR 510H CXD2463R CXD31 DEF33	PDF
Am29BDD160GB64C Abstract: No abstract text available Text: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while	Original	Am29BDD160G 16-bit/512 32-Bit) Am29BDD160GB64C	PDF
am29f date code markings Abstract: am29lv date code markings Am29BDD160GB64C Text: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while	Original	Am29BDD160G 16-bit/512 32-Bit) am29f date code markings am29lv date code markings Am29BDD160GB64C	PDF
Untitled Abstract: No abstract text available Text: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks	Original	512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 60-ball 90-ball 09005aef846e285e 512mb	PDF
T67M Abstract: ELPIDA mobile dram LPDDR2 Text: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks	Original	512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 09005aef83dd2b3e T67M ELPIDA mobile dram LPDDR2	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double	Original	DS05-11463-2E MB81EDS516545 MB81EDS516545 64-bit	PDF
Untitled Abstract: No abstract text available Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)	Original	128Mb: MT46H8M16LF MT46H4M32LF 09005aef82ce3074/Source: 09005aef82ce20c9	PDF

DEF01 Search Results

DEF01 Price and Stock

Vishay Intertechnologies RDEF016075R00JFB00

Vishay Intertechnologies RDEF017546R00JFB00

Vishay Intertechnologies RDEF01003K300JDB00

Vishay Intertechnologies RDEF0100500R0JDB00

Vishay Intertechnologies RDEF01752R000JFBNI

DEF01 Datasheets Context Search

Untitled

A1833

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MT46H64M16

s11 stopping compound

Untitled

Untitled

MT46H128M16

circuit diagram of ddr ram

P-VFBGA 49 package

ELPIDA lpddr

ccd image sensor sony

h3ba omron timer

CXD3152AR

HYB18M512

ADSP-2181

Untitled

ICX258AL

Am29BDD160GB64C

am29f date code markings

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T67M

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