A14A0 Search Results

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

Part Marking STMicroelectronics TSSOP8

Abstract: M95256
Contextual Info: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes

atmel100

Abstract: AT25DQ321 AT25DQ161 AT25DQ
Contextual Info: Atmel AT25DQ161 16-Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support Features DATASHEET Not Recommended for New Designs Use AT25DQ321  Single 2.7V - 3.6V supply  Serial Peripheral Interface SPI compatible Supports SPI Modes 0 and 3

AT25DF081A

Abstract: AT25DF081A-SH AT25DF081A-SSH-T 8715a
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • • • • • • • • • • • • • • • • – Supports SPI Modes 0 and 3 – Supports RapidS Operation – Supports Dual-Input Program and Dual-Output Read

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

SST39LF512

Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet

SST39SF010A

Abstract: SST39SF020A SST39SF040 A17-A3
Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations

MS-034

Abstract: MT90871 MT90871AG 4096MB
Contextual Info: MT90871 Flexible 8K Digital Switch F8kDX Product Brief PB5653 Features ISSUE 1 December 2001 Ordering Information • • • • • • • • • 8,192-channel x 8,192-channel non-blocking unidirectional switching. The Backplane and Local inputs and outputs can be combined to

Contextual Info: IS61C632A m i 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM SEPTEMBER 1997 FEATURES DESCRIPTION • The I S S I IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

AT25DL081

Contextual Info: Atmel AT25DL081 8-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support DATASHEET Features  Single 1.65V - 1.95V supply  Serial Peripheral Interface SPI compatible    Supports SPI Modes 0 and 3 Supports Atmel RapidS operation

SBP9989

Abstract: U555 AFG MARKING CODE architecture diagram for 8080 im 1117 marking S98 MIL-M-38510 part marking MICROCIRCUIT PJ 1179 0c55696
Contextual Info: I QUALIFICATION I REQUIREMENTS I REMOVED MIL-M-38510/465A 8 August 1986 I I I Su p e r s e d i n g MIL-M-38510/465 USAF 20 October 198? MILITARY SPECIFICATION MICROCIRCUITS DIGITAL, INTEGRATED INJECTION LOGIC (I 2 L), PARALLEL 16-BIT MICROPROCESSOR, MONOLITHIC SILICON

FM33256B

Contextual Info: FM33256B 256-Kbit 32 K x 8 Integrated Processor Companion with F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) ❐ Logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM25V02 256-Kbit 32 K x 8 Serial (SPI) F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

H 1061

Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

RG5V02

Abstract: fm25v02
Contextual Info: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: MIXED TECHNOLOGY PUMA molate PUMA 2X0215 ISSUE 1.1 : October 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r inc. 524,288 bit EEPROM and 524,288 bit SRAM Features Output user configurable as 8 / 16 bit wide. Average Power EEPROM 732 /1155 mW max .

Contextual Info: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

Contextual Info: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

39WF800A

Abstract: SST39WF800A SST39WF800B
Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800B Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

39lf040

Abstract: SST39VF010 SST39VF020 SST39VF040 SST39VF512 SST39LF010 SST39LF020 SST39LF040 SST39LF512
Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet

29ee020

Abstract: 29EE020-120 ms1307 29LE020 29VE020 SST29EE020 SST29LE020 SST29VE020 29ee020-150
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020, SST29LE020, SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE020 – 3.0V-only for the 29LE020 – 2.7V-only for the 29VE020 • Superior Reliability – Endurance: 100,000 Cycles (typical)

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

toshiba tmpn3150

Contextual Info: TO SH IB A ,NltbKAItü UKIUIÌ T M P N 3 1 5 0 TECHNICAL DATA 1. Features of the TMPN3150 The TMPN3150 is a complete system on a chip and contains the following: •Three 8-bit Processors: • two •a processors third dedicated processor to LONTALK dedicated

AT29C512-90

Contextual Info: AT29C512 Features • • • • • • • • • • • • Fast Read A ccess Tim e - 70 ns 5-V olt-O nly R eprogram m ing Sector P rogram O peration Single C ycle R eprogram E rase and Program 512 Sectors (128 bytes/sector) Internal A ddress and Data Latches tor 128-B ytes