Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    A10 BGA Search Results

    A10 BGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P9030-0NTGI Renesas Electronics Corporation Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 Visit Renesas Electronics Corporation
    P9030-0NTGI8 Renesas Electronics Corporation Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 Visit Renesas Electronics Corporation
    D6417750RBP240DV Renesas Electronics Corporation 32-bit Microcontrollers, BGA, / Visit Renesas Electronics Corporation
    HD6417750RBP240 Renesas Electronics Corporation 32-bit Microcontrollers, BGA, / Visit Renesas Electronics Corporation
    HD6417750RBP200V Renesas Electronics Corporation 32-bit Microcontrollers, BGA, / Visit Renesas Electronics Corporation
    SF Impression Pixel

    A10 BGA Price and Stock

    Infineon Technologies AG BGA10H1MN9E6327XTSA1

    Power Switch ICs - Power Distribution RF MMIC 3 TO 6 GHZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BGA10H1MN9E6327XTSA1 12,000
    • 1 $0.89
    • 10 $0.655
    • 100 $0.513
    • 1000 $0.412
    • 10000 $0.364
    		Buy Now

    Infineon Technologies AG BGA10M1MN9E6327XTSA1

    Power Switch ICs - Power Distribution RF MMIC 3 TO 6 GHZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BGA10M1MN9E6327XTSA1 12,000
    • 1 $0.89
    • 10 $0.655
    • 100 $0.513
    • 1000 $0.412
    • 10000 $0.364
    		Buy Now

    Vishay Intertechnologies VJ1812A102KBGAT4X

    Multilayer Ceramic Capacitors MLCC - SMD/SMT VJ1812A102KBGAT4X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VJ1812A102KBGAT4X
    • 1 $3.05
    • 10 $2.34
    • 100 $1.78
    • 1000 $1.25
    • 10000 $1.16
    		Get Quote

    Vishay Intertechnologies VJ1812A101JBGAT4X

    Multilayer Ceramic Capacitors MLCC - SMD/SMT VJ1812A101JBGAT4X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VJ1812A101JBGAT4X
    • 1 $2.84
    • 10 $2.18
    • 100 $1.66
    • 1000 $1.03
    • 10000 $0.994
    		Get Quote

    OMRON Corporation A22NL-BGA-TGA-G100-GD

    Pushbutton Switches Assm, FG, BM Bzl, Gren, 1 NO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics A22NL-BGA-TGA-G100-GD
    • 1 $31.62
    • 10 $27.87
    • 100 $24.02
    • 1000 $22.64
    • 10000 $22.64
    		Get Quote
    Find more A10 BGA price and stock on Findchips.com

    A10 BGA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MC68000

    Abstract: datasheet MC68000 MC68HC001 A10-A11
    Text: MC68HC001 MC68000/MC68010/MC68HC000 K K NC FC2 FC0 A1 A3 A4 A6 A7 A9 MODE FC2 FC0 NC A1 A3 A4 A6 A7 A9 NC BERR IPL0 FC1 NC A2 A5 A8 A10 A11 A14 J J BERR IPL0 FC1 NC A2 A5 A8 A10 A11 A14 H H E IPL2 IPL1 E IPL2 IPL1 A13 A12 A16 A13 A12 A16 G G VMA VPA VMA VPA


    Original     		MC68HC001 MC68000/MC68010/MC68HC000 MC68000 datasheet MC68000 MC68HC001 A10-A11 PDF

    MC68360

    Abstract: No abstract text available
    Text: MC68360 BGA PIN ASSIGNMENT C 1997 Motorola PIN NAME PIN NAME A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 NC NC CAS1/IACK2 NC DSACK0/TB1 PRTY2/IOUT0/RQOUT PRTY0/IOUT2 IPIPE1/RAS1DD/BCLRI NC NC1 BR IRQ4/IOUT1 RESETh TDI RMC/CONFIG0/LOCK BERR/TEA


    Original     		MC68360 FREEZE/CONFIG02/MBARE PRTY3/16BM A29/WE2 PA14/TIN4/BRGO4/CLK7 PA13/BRGCLK2/L1RCLKB/TOUT3 PA12/TIN3/BRGO3/CLK5 A28/WE3 A30/WE1 A31/WE0 PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10


    Original     		SN74TVC3010 10-BIT SCDS088B SN74TVC3010DBQR SN74TVC3010DGVR SN74TVC3010DW SN74TVC3010DWR SN74TVC3010PWR PDF

    D4136

    Abstract: m 208 b1 PQFP ALTERA 160 EPM7256A EPM7256AE EPM7256E EPM7256S EPM7512AE m64196 L6M15
    Text: EPM7256A and EPM7256AE Dedicated Pin-Outs ver. 1.0 Dedicated Pin 100-Pin TQFP 100-Pin FineLine BGA INPUT/GCLK1 87 A6 INPUT/GCLRn 89 B5 INPUT/OE1 88 B6 INPUT/OE2/GCLK2 90 A5 TDI 1 4 A1 TMS (1) 15 F3 TCK (1) 62 F8 TDO (1) 73 A10 GNDINT 38, 86 D6, G5 144-Pin TQFP 208-Pin PQFP 256-Pin FineLine BGA


    Original     		EPM7256A EPM7256AE 100-Pin 100-Pin 144-Pin 208-Pin 256-Pin EPM7256E, EPM7256S, D4136 m 208 b1 PQFP ALTERA 160 EPM7256E EPM7256S EPM7512AE m64196 L6M15 PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10


    Original     		SN74TVC3010 10-BIT SCDS088B SCDA006 SZZU001B, SDYU001N, SCET004, SCAU001A, 000914/08302000/TXII/08302000/sn74tvc3010 PDF

    DH11

    Abstract: DH21 DH23 b09 n03 DH19 dh17 A09 N03 Dh14 dh28 Dh29
    Text: OFFICIAL - 9/17/97 CBGA Footprints Rev. F 603 Family CBGA C16 E04 D13 F02 D14 G01 D15 E02 D16 D04 E13 G02 E15 H01 E16 H02 F13 J01 F14 J02 F15 H03 F16 F04 G13 K01 G15 K02 H16 M01 J15 P01 L02 K04 C01 B04 B03 B02 A04 B07 J04 A10 L01 B06 E01 D08 A06 D07 B01 B05


    Original     		604ev 603ev. 604ev. 604ev DH11 DH21 DH23 b09 n03 DH19 dh17 A09 N03 Dh14 dh28 Dh29 PDF

    S1A14

    Abstract: S1d9 225-pin BGA Socket S1g4 XC73108 S1-K14 S1G15 HW-133 S1D5 S1D-13
    Text: ZONE REV 01 P1 TTL0 TTL3 A2 TTL6 A3 TTL9 A4 AID6 D3 D2 D1 D0 S1-M15 S1-N14 S1-P14 S1-N12 A5 TTL1 B2 TTL7 B3 TTL10 B4 TTL12 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13


    Original     		S1-M15 S1-N14 S1-P14 S1-N12 TTL10 TTL12 TTL14 TTL18 TTL44 TTL46 S1A14 S1d9 225-pin BGA Socket S1g4 XC73108 S1-K14 S1G15 HW-133 S1D5 S1D-13 PDF

    VMD32

    Abstract: R526
    Text: 1 2 3 4 5 6 7 8 BWP BCA11 BCA10 BCA25 BCA12 BCA24 BCA15 BCA23 BCA16 BCA22 BCA21 BCA20 BCA14 BCA19 BCA13 BCA18 BCA8 BCA17 BCA9 U6 T8 T16 T13 T11 R6 R15 P5 P16 M16 D11 D10 C10 B10 A10 D9 C9 B9 A9 D8 C8 B8 A8 E7 D7 C7 B7 A7 E6 D9 3,7,20 2 AGP_BUSY# 1 G_REQ# 3


    Original     		BCA11 BCA10 BCA25 BCA12 BCA24 BCA15 BCA23 BCA16 BCA22 BCA21 VMD32 R526 PDF

    G4-G15

    Abstract: MC68360
    Text: MC68360 PGA PIN ASSIGNMENT C 1997 Motorola PIN NAME PIN NAME A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 XTAL NC3 A26 A24 A21 A18 A15 A12 A11 A9 A6 A3 A2 TRIS/TS CS6/RAS6 CS3/RAS3 CS0/RAS0 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15


    Original     		MC68360 A28/WE3 A29/WE2 D13D2 PA13/BRGCLK2/L1RCLKB/TOUT3/CLK6 PA10/TIN2/L1TCLKA/BRGO2/CLK3 PB16/STRBO/BRGO3 PB13/L1ST2/RTS2 PB10/L1CLKOB/SMTXD2 PC10/SDACK1/L1SYNCA/CTS4 G4-G15 PDF

    diode t25 4 B9

    Abstract: transistor af18 socket s1 diode t25 4 d9
    Text: P1 TTL0 D3 A1 TTL3 A2 TTL6 A3 TTL9 P1 D2 D1 D0 A4 S1-W2 S1-AA4 S1-AD3 S1-AE3 TTL1 P1 D4 B1 TTL4 B2 TTL7 B3 TTL10 B4 AID6 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 +5V B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 S1-U2 S1-R2 D6 TDI TTL2


    Original     		TTL10 TTL12 TTL14 TTL18 TTL44 TTL19 S1-M24 S1-AD12 S1-D12 TTL17 diode t25 4 B9 transistor af18 socket s1 diode t25 4 d9 PDF

    MCP 256M nand toshiba

    Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
    Text: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package


    Original     		TY80009000AMGF TY80009000AMGF 456-bit 128-bit 149-pin P-FBGA149-1013-0 N-39/39 MCP 256M nand toshiba toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9 PDF

    db3 bl

    Abstract: No abstract text available
    Text: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Mar. 07, 2008) - Modify DC spec. - Modify tSAC and tSHZ timing


    Original     		M52S128324A db3 bl PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007


    Original     		M52S128324A PDF

    ED07

    Abstract: ED16-23 TMS320C671
    Text: WED3DL328V 8Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		WED3DL328V 8Mx32 WED3DL328V 4x1Mx32. 8Mx16 TMS320C6000 TMS320C, C6211 ED07 ED16-23 TMS320C671 PDF

    IC42S16101

    Abstract: tCKA
    Text: IC42S16101 Document Title 512K x 16 Bit x 2 Banks 16-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B 0C 0D 0E Initial Draft Change tOH from 2.5 ns to 2.2 ns Add 60 ball(16M SDRAM) VF-BGA package Add Pb-free package Add speed grade -5ns Obselte speed grade -8ns


    Original     		IC42S16101 16-MBIT) DR025-0F IC42S16101-5TI IC42S16101-5TIG IC42S16101-5BIG IC42S16101-6TI IC42S16101-6TIG IC42S16101-6BIG IC42S16101-7TI IC42S16101 tCKA PDF

    ED16-23

    Abstract: TMS320C TMS320C6000 WED3DL328V
    Text: WED3DL328V 8Mx32 SDRAM PRELIMINARY FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 TMS320C6000 TMS320C, C6211 ED16-23 TMS320C PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008 Revision : 1.1 1/46 ESMT Preliminary


    Original     		M53D128168A PDF

    TMS320C6000

    Abstract: TMS320C6202 ED07
    Text: WED3DL324V 4Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in


    Original     		WED3DL324V 4Mx32 WED3DL324V 4x1Mx32. 4Mx16 TMS320C6000 TMS320C6201/C6701and TMS320C6202, TMS320C6202 ED07 PDF

    MAKING A10 BGA

    Abstract: 90 ball VFBGA
    Text: ESMT M52S32321A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Revision 1.2 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns)


    Original     		M52S32321A 32Bit M52S32321A MAKING A10 BGA 90 ball VFBGA PDF

    4MX32

    Abstract: a106a7
    Text: WED3DL324V 4Mx32 SDRAM FEATURES DESCRIPTION n 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		WED3DL324V 4Mx32 WED3DL324V 4x1Mx32. 4Mx16 133MHz, 125MHz 100MHz. a106a7 PDF

    M52D32321A

    Abstract: No abstract text available
    Text: ESMT M52D32321A Revision History : Revision 1.0 Nov. 02, 2006 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (May. 03, 2007) - Modify DC Characteristics Revision 1.3 (May. 14, 2007) - Modify tSS (1.5ns => 2.5ns) and tSH(1ns => 1.5ns)


    Original     		M52D32321A 32Bit M52D32321A PDF

    Untitled

    Abstract: No abstract text available
    Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119


    Original     		WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHz, 125MHz 100MHz52 PDF

    bt 2323

    Abstract: d 5072 OP 778 4303 303 3200 AP 309 d 5072 transistor 62 AP 804 L 083 4MX32 WED3DL324V10BI
    Text: WED3DL324V White Electronic Designs 4Mx32 SDRAM FEATURES n n n n n n n DESCRIPTION 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer


    Original     		WED3DL324V 4Mx32 WED3DL324V 4x1Mx32. 4Mx16 133MHz, 125MHz 100MHz. bt 2323 d 5072 OP 778 4303 303 3200 AP 309 d 5072 transistor 62 AP 804 L 083 WED3DL324V10BI PDF

    M52D32321A

    Abstract: No abstract text available
    Text: ESMT M52D32321A Revision History : Revision 1.0 Nov. 02, 2006 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (May. 03, 2007) - Modify DC Characteristics Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2.5ns) and tSH(1ns => 1.5ns)


    Original     		M52D32321A 32Bit M52D32321A PDF