A 103 TRANSISTOR Search Results

fr91a

Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Contextual Info: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72

transistor 7016

Abstract: hf 9907
Contextual Info: What HEWLETT mLrJm P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifier

Contextual Info: Who IHEWLETT mUKM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifier

Q67040-S4009-A2

Abstract: SPP31N05
Contextual Info: BUZ 103 S Preliminary data SPP31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 S 55 V 31 A 0.04 Ω

marking 15430

Contextual Info: Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high

Contextual Info: Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high

CDMA2000-1X

Abstract: RAYTHEON RMPA1956-103
Contextual Info: RMPA1956-103 - 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module RF Components PRODUCT INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands.

RAYTHEON

Abstract: RMPA2053-103
Contextual Info: RMPA2053-103 3V WCDMA Power Amplifier Module with Analog Bias Control ADVANCED INFORMATION Description Features The RMPA2053-103 is a power amplifier module PAM for 3GPP Wideband CDMA (WCDMA) applications. The PAM has been specifically designed for low current draw at low power levels while maintaining high power

RAYTHEON

Abstract: CDMA2000-1X RMPA1953-103 RAYTHEON INC, INTERFACE ACPR24
Contextual Info: RMPA1953-103 3V PCS CDMA & CDMA2000 Power Amplifier Module with Digital Bias Control ADVANCED INFORMATION Description Features The RMPA1953-103 is a power amplifier for CDMA and CDMA2000-1X personal communications system PCS applications. The PA is internally matched to 50 ohms to minimize the use of external components. Advanced DC

A706 transistor

Contextual Info: 3 H Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100␣MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high

Contextual Info: RMPA1956-103 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands. The PA is internally matched to 50

UPA101

Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
Contextual Info: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,

MJE 340 transistor

Abstract: SOT-103 74341 MSB037 BFR541 npn transistor high current
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR541 FEATURES DESCRIPTION • High power gain • High transition frequency Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT 103 package. • Gold metallization ensures

Thermal considerations for SOT89

Abstract: BD136 BD226 BDX35
Contextual Info: Philips Semiconductors Thermal Impedance Curves General THERMAL IMPEDANCE CURVES Transistor thermal impedance curves for various packages and duty cycles are shown in Figures 1 to 23 inclusive. MGL193 103 handbook, full pagewidth Zth j-a δ=1 0.75 0.5 (K/W)

Contextual Info: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

GKD transistor

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)

ICL7611

Abstract: MAX872
Contextual Info: POWER-SUPPLY CIRCUITS Application Note 103: Jul 09, 1998 P-FET Linear Regulator Has Low Dropout Voltage P-channel MOSFETs P-FETs , though more expensive than pnp transistors, are free of the dissipation loss associated with base drive in a pnp circuit. P-FETs also have a lower saturation

CHDTA115GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA144GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC124GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB143TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114GKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)