V1640
Abstract: MSM51V16405D MSM51V16405DSL
Text: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The V16405D/DSL achieves high integration, high-speed operation,
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E2G0124-17-61
MSM51V16405P
MSM51V16405PSL
304-Word
TheMSM51
V16405D/DSL
MSM51V16405D/DSL
MSM51V16405D
/24-pin
V1640
MSM51V16405DSL
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Untitled
Abstract: No abstract text available
Text: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains
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V16405A-60/-70
MB81V16405A
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MSM51V16405A
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16405 A_ 4,194,304-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE W ITH EDO DESCRIPTION The V16405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16405A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V16405A is
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MSM51V16405A_
304-Word
MSM51V164Q5A
MSM51V16405A
26/24-pin
cycles/64
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Untitled
Abstract: No abstract text available
Text: E2G0124-17-61 O K I Semiconductor This version: Mar. 1998 M SM V16405D/DSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The V16405D/DSL achieves high integration, high-speed operation,
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E2G0124-17-61
51V16405D/DSL
304-Word
TheMSM51
V16405D/DSL
MSM51V16405D/DSL
MSM51V16405D
/24-pin
26/24-pin
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MSM51V16405A
Abstract: FC7214
Text: O K I Semiconductor_ MSM51 V16405 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The V16405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16405A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V16405A is
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6405A_
304-Word
MSM51V16405A
26/24-pin
cycles/64
FC7214
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TC51V16405
Abstract: TC51V16405c
Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The
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TCS1V1c405
TC51V16405CSJS/CSTS
300mil)
TCS1V16405
TC51V16405
SOJ26
TSOP26
TC51V16405c
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 M x 4 BITS HYPER PAGE MODE DYNAMIC RAM V16405A-60/-70 CMOS 4,194,304 x 4 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16405A features a “hyper page” mode of operation whereby high
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MB81V16405A-60/-70
MB81V16405A
MB81V16405A
26-LEAD
LCC-26P-M09)
0321TYP
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M5M4V16405CJ
Abstract: No abstract text available
Text: MITSUBISHI LSI» „ iW U n a R v M 5 M 4 V 1 6 4 0 5 C J ,T P - 5 ,- 6 , - 7 , pB E - 5 S .- 6 S .- 7 S HYPER PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance
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16777216-BIT
4194304-WORD
M5M4V16405CJ
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 M x 4 BIT HYPER PAGE MODE DYNAMIC RAM V16405B-50/-60 CMOS 4,194,304 x 4 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16405B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16405B features a “hyper page” mode of operation whereby high
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MB81V16405B-50/-60
MB81V16405B
MB81V16405B
26-pin
FPT-26P-M05)
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY V16405A-60/-70 CMOS 4,194,304 x 4 BITS Hyper Page Mode Dynamio RAM • DESCRIPTION The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM^-t-hat'"contains 16,777,216 memory cells accessible in 4-bit increments.The V16405A features a ^peFipage^m ode of operation whereby high
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MB81V16405A-60/-70
MB81V16405A
F9703
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PDF
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M5M4V16405
Abstract: No abstract text available
Text: MITSUBISHI LSIs Rev.1.0 V16405DJJP -5r 6,-7r 5Sr 6Sr 7S EDO (HYPER PAGE) MODE 16777216-BIT ( 4194304-WQRD BY 4-BIT ) DYNAMIC RAM D E S C R IP T IO N This is a fam ily of 4194304-word by 4-bit dynam ic RAMs with EDO (Extended Data Out : Hyper Page) mode function, fabricated with
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M5M4V16405DJJP
16777216-BIT
4194304-WQRD
4194304-word
refres16777216-BIT
Note31)
M5M4V16405
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT HYPER PAGE MODE DYNÄMIG RÄ V16405B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Hyper Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16405B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16405B features a “hyper page” mode of operation whereby high
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MB81V16405B-50/-60/-50L/-60L
MB81V16405B
F9712
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PDF
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Untitled
Abstract: No abstract text available
Text: P RE LIM IN A RY - - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 81 V 1 6405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CM O S 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains
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405A-60/-70
MB81V16405A
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11302-1E MEMORY CMOS 4 M x 4 BITS HYPER PAGE MODE DYNAMIC RAM V16405A-60/-70 CMOS 4,194,304 x 4 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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05-11302-1E
MB81V16405A-60/-70
MB81V16405A
MB81V16405A
26-LEAD
LCC-26P-M09)
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PDF
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