TSTS7100 Search Results
TSTS7100 Price and Stock
Vishay Semiconductors TSTS7100EMITTER IR 950NM 250MA TO18 |
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TSTS7100 | Bulk | 1 |
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Vishay Intertechnologies TSTS7100IR EMITTER STD 950NM TO18 5DEG-e4 - Bulk (Alt: 46Y2652) |
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TSTS7100 | Bulk | 19 Weeks, 2 Days | 1 |
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TSTS7100 | 181 |
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TSTS7100 | Bulk | 1 |
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TSTS7100 | Bulk | 1,000 |
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TSTS7100 | 7 Weeks | 1,000 |
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Temic Semiconductors TSTS7100INFRARED LED, 3.9MM, 1-ELEMENT, 950NM |
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TSTS7100 | 477 |
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TSTS7100 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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TSTS7100 | Vishay Telefunken | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case | Original |
TSTS7100 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
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TSTS7100 2002/95/EC 2002/96/EC TSTS7100 11-Mar-11 | |
Contextual Info: TSTS7100 VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
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TSTS7100 TSTS710. D-74025 23-Jun-04 | |
Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
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TSTS7100 2002/95/EC 2002/96/EC TSTS7100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
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TSTS7100 TSTS710. 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSTS710Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
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TSTS7100 TSTS710. 2002/95/EC 2002/96/EC D-74025 08-Mar-05 TSTS710 | |
TSTS7100
Abstract: TSTS710
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TSTS7100 TSTS710. 2002/95/EC 2002/96/EC 08-Apr-05 TSTS7100 TSTS710 | |
Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
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TSTS7100 2002/95/EC 2002/96/EC TSTS7100 2002/95/EC. 2011/65/EU. JS709A | |
TSTS7100Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
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TSTS7100 2002/95/EC 2002/96/EC TSTS7100 18-Jul-08 | |
TSTS710Contextual Info: Tem ic TSTS710. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -18 pack age. Their glass lenses provide a very high radiant |
OCR Scan |
TSTS710. D-74025 15-Jul-96 TSTS710 | |
CQX48B
Abstract: TLH04400 TLRG542
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TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 CQX48B TLH04400 TLRG542 | |
Contextual Info: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics. |
Original |
TSTS710. D-74025 20-May-99 | |
packagingContextual Info: Packaging and Order Information www.vishay.com Vishay Semiconductors Packaging and Order Information PACKAGING SURVEY RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the dry bag has been opened to prevent moisture absorption. TABLE 1 - PACKAGING OPTIONS OF |
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TEKS5400S TEKT5400S TSKS5400S BP104 BPW34 BP104S BPW34S BP104S 02-Mar-15 packaging | |
c1g smd
Abstract: bpv10nf TEMD2100
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CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100 | |
TSTS 7102
Abstract: TSTS710 TSTS7101 TSTS7100 TSTS7102 TSTS7103
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TSTS710. D-74025 20-May-99 TSTS 7102 TSTS710 TSTS7101 TSTS7100 TSTS7102 TSTS7103 | |
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet | |
5202 GE
Abstract: KA 7502 STS7102 TS7101
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CQY37N 5202 GE KA 7502 STS7102 TS7101 | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01 | |
APPLICATION CIRCUIT OF TSAL4400
Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
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conta80089 TSHF5400 TSMF1000 TSMF3700 TSMS3700 TSML1000 TSML3700 TSPF5400 TSSF4500 TSSP4400 APPLICATION CIRCUIT OF TSAL4400 TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400 | |
tsta7500Contextual Info: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AGING OF INFRARED EMITTER COMPONENTS TECHNICAL INFORMATION w w w. v i s h a y. c o m Aging of Infrared Emitter Components INTRODUCTION TYPICAL DEGRADATION OF RADIANT POWER AFTER 4000 h OPERATION DEVICE AGING AND DEVICE |
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VHN-TI2302-0306 tsta7500 | |
TSTS 7102
Abstract: tsts 7103 TSTS7101 TSTS7100 TSTS7102 TSTS7103
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D-74025 TSTS 7102 tsts 7103 TSTS7101 TSTS7100 TSTS7102 TSTS7103 | |
TDS05160
Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
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OCR Scan |
TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 TDS05160 TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g |
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VCNL4020X01 VCNL3020 AEC-Q101 VCNL4010 VCNL4020 VMN-SG2123-1502 | |
IEC60601-2-22
Abstract: APPLICATION CIRCUIT OF TSAL4400 IEC608251 voting elements CQX48B CQY36N CQY37N IEC60825-1 LD50 TSAL4400
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TSSF4500 TSHA4400 TSSS2600 TSHA4401 TSTA7100 TSHA5200 TSTA7300 TSHA5201 TSTA7500 TSHA5202 IEC60601-2-22 APPLICATION CIRCUIT OF TSAL4400 IEC608251 voting elements CQX48B CQY36N CQY37N IEC60825-1 LD50 TSAL4400 |