Untitled
Abstract: No abstract text available
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity
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TSTS7100
2002/95/EC
2002/96/EC
TSTS7100
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSTS7100 VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics.
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TSTS7100
TSTS710.
D-74025
23-Jun-04
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Untitled
Abstract: No abstract text available
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity
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TSTS7100
2002/95/EC
2002/96/EC
TSTS7100
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics.
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TSTS7100
TSTS710.
2002/95/EC
2002/96/EC
08-Apr-05
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TSTS710
Abstract: No abstract text available
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics.
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TSTS7100
TSTS710.
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
TSTS710
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TSTS7100
Abstract: TSTS710
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics.
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TSTS7100
TSTS710.
2002/95/EC
2002/96/EC
08-Apr-05
TSTS7100
TSTS710
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PDF
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Untitled
Abstract: No abstract text available
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSTS7100
2002/95/EC
2002/96/EC
TSTS7100
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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TSTS7100
Abstract: No abstract text available
Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity
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TSTS7100
2002/95/EC
2002/96/EC
TSTS7100
18-Jul-08
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TSTS710
Abstract: No abstract text available
Text: Tem ic TSTS710. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -18 pack age. Their glass lenses provide a very high radiant
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TSTS710.
D-74025
15-Jul-96
TSTS710
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CQX48B
Abstract: TLH04400 TLRG542
Text: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2
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TLBR5410
TLDR4400
TLDR4900
TLDR5400
TLDR5800
TLHE4900
TLHE5100
TLHE5101
TLHE5102
TLHE5800
CQX48B
TLH04400
TLRG542
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Untitled
Abstract: No abstract text available
Text: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.
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TSTS710.
D-74025
20-May-99
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packaging
Abstract: No abstract text available
Text: Packaging and Order Information www.vishay.com Vishay Semiconductors Packaging and Order Information PACKAGING SURVEY RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the dry bag has been opened to prevent moisture absorption. TABLE 1 - PACKAGING OPTIONS OF
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TEKS5400S
TEKT5400S
TSKS5400S
BP104
BPW34
BP104S
BPW34S
BP104S
02-Mar-15
packaging
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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TSTS 7102
Abstract: TSTS710 TSTS7101 TSTS7100 TSTS7102 TSTS7103
Text: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.
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Original
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TSTS710.
D-74025
20-May-99
TSTS 7102
TSTS710
TSTS7101
TSTS7100
TSTS7102
TSTS7103
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
Text: Eye Safety Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC EN DIN 60825-1 LEDs are removed from IEC 60825-1 but are still covered by the free air communication safety standard IEC 60825-12. Therefore LEDs for free air communication are still to be
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11-Sep-08
diode SR 360
IEC 62471
60825-1
IEC-60825
diode sr 60
IEC62471
DIN 875
VSLB3940X01
IEC 60825-1
diode SR 360 datasheet
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5202 GE
Abstract: KA 7502 STS7102 TS7101
Text: TELEFUNKEN ELECTRONIC m 44E » ñ ^ D O T b 0011175 2 B1ALG6 Infrared Emitting Diodes G aA s IR Emitting Diodes in Plastic Package Characteristics Package Type I. Dimensions see page 4 9 -5 3 at at U mW/sr mA fp= 1 0 y s /F = 1 A ns mA TV* 1 8 m m Blue p la stic p a c ka ge
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CQY37N
5202 GE
KA 7502
STS7102
TS7101
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TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS SELECTOR GUIDE w w w. v i s h a y. c o m INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS Vishay Semiconductors Infrared Emitters
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VMN-SG2123-1010
TSUS3400
VCNL4000
VISHAY VSLB3940 DATASHEET
smartphone proximity sensor
TEMT6200FX01
BPW41N
infrared emitters and detectors
TCND5000
TCRT1010
TEMD6010FX01
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APPLICATION CIRCUIT OF TSAL4400
Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
Text: Vishay Semiconductors Safety Reliability and Safety All semiconductor devices have the potential of failing or degrading in ways that could impair the proper operation of safety systems. Well-known circuit techniques are available to protect against and minimize the effects of such occurrences. Examples of
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conta80089
TSHF5400
TSMF1000
TSMF3700
TSMS3700
TSML1000
TSML3700
TSPF5400
TSSF4500
TSSP4400
APPLICATION CIRCUIT OF TSAL4400
TSAL6400
TSAL6100
TSHF5200
TSTS7102
CQX48B
CQY36N
CQY37N
tsta7500
TSAL4400
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tsta7500
Abstract: No abstract text available
Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AGING OF INFRARED EMITTER COMPONENTS TECHNICAL INFORMATION w w w. v i s h a y. c o m Aging of Infrared Emitter Components INTRODUCTION TYPICAL DEGRADATION OF RADIANT POWER AFTER 4000 h OPERATION DEVICE AGING AND DEVICE
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VHN-TI2302-0306
tsta7500
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TSTS 7102
Abstract: tsts 7103 TSTS7101 TSTS7100 TSTS7102 TSTS7103
Text: TSTS 710. TELEFUNKEN Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS 710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external
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D-74025
TSTS 7102
tsts 7103
TSTS7101
TSTS7100
TSTS7102
TSTS7103
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TDS05160
Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
Text: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601
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TLBR5410
TLDR4400
TLDR4900
TLDR5400
TLDR5800
TLHE4900
TLHE5100
TLHE5101
TLHE5102
TLHE5800
TDS05160
TDS05150
TDS03160
TDS03150
TDSR5150
9999 DIODE
tsop1736
TLU02401
BPW2
silver ag wire Bond
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g
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VCNL4020X01
VCNL3020
AEC-Q101
VCNL4010
VCNL4020
VMN-SG2123-1502
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IEC60601-2-22
Abstract: APPLICATION CIRCUIT OF TSAL4400 IEC608251 voting elements CQX48B CQY36N CQY37N IEC60825-1 LD50 TSAL4400
Text: VISHAY Vishay Semiconductors Safety Toxicity Although gallium arsenide and gallium aluminium arsenide are both arsenic compounds, under normal use conditions they should be considered relatively benign. Both materials are listed by the 1980 NIOH “Toxicology of Materials” with LD50 values Lethal
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TSSF4500
TSHA4400
TSSS2600
TSHA4401
TSTA7100
TSHA5200
TSTA7300
TSHA5201
TSTA7500
TSHA5202
IEC60601-2-22
APPLICATION CIRCUIT OF TSAL4400
IEC608251
voting elements
CQX48B
CQY36N
CQY37N
IEC60825-1
LD50
TSAL4400
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