TSHF5200 Search Results

Contextual Info: TSHF5200 Vishay Telefunken ¾ High Speed IR Emitting Diode in ø 5 mm T–1 Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

Contextual Info: Tem ic TSHF5200 Semiconductors High Speed IR Emitting Diode in 0 5 mm T-1% Package Description T SH F 5200 is a high speed infrared light em itting diode in GaAIAs on G aAIAs double hetero (DH ) technology, m olded in a clear, untinted plastic package. The new technology com bines the high speed of D H G aAIAs with the efficiency of standard GaAIAs and the

TSHF5200

Contextual Info: TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

Contextual Info: TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

Contextual Info: TSHF5200 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted

Contextual Info: TSHF5200 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted

Contextual Info: TSHF5200 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted

TFDS3000

Contextual Info: VISHAY Vishay Telefunken Qualification and Long Term Monitoring Wafer Process Qualification IR-Emitter Operating Life Tamb = 25°C, Tj = 100°C, lF = 100 mA ! j TSHF5200 TSHF5200 1.000 h 2.000 h 1.000 h Tamn - 85 C. lF = 500 mA, duty cycle 20% TFDS3000 casted

TSHF5200

Contextual Info: TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

temic infrared

Abstract: TSHF5200 TELEFUNKEN infrared TELEFUNKEN e
Contextual Info: TSHF5200 High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH–

Contextual Info: Temic TSHF5200 Semiconductors High Speed IR Emitting Diode in 0 5 mm T -l3/4 Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and the

TSHF5200

Contextual Info: TSHF5200 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted

TSHF5200

Contextual Info: TSHF5200 Vishay Semiconductors ¾ High Speed IR Emitting Diode in ø 5 mm T–1 Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic

CQX48B

Abstract: TLH04400 TLRG542
Contextual Info: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2

CQX48B

Abstract: IR Emitters "IR Emitters"
Contextual Info: VISH A Y Vishay Telefunken ▼ Selector Guide IREDs Infrared Emitting Diodes Package Dim. Fig- Characteristics Jype + /- tp Standard IR Emitters GaAs 950 nm in Plastic Package T 40° 25 ! CQY36N am 10 26 L / mW/sr Ip / mA VF/ V CQY37N 12 ° 5 (>2.2) TSUS4400

metal detector WITH IC 555

Abstract: ic 555 use with metal detector silver ag wire Bond TSAL6200 TSAL6400 TSHF5200 TSHF5400 TSOP21 TSAL4400 silver epoxy
Contextual Info: VISHAY Vishay Semiconductors Constituents of IR Receiver Modules Responsible electronic component and equipment manufacturers are already preparing for the time when the life span of their products comes to an end by scrutinizing the materials incorporated and their

IR LED 790 nm

Abstract: IR LED 800 nm BPV23NF TSMS1000 PH 40 E BPW34 application S186P 11 NM 65 N TSAL7600 BPV10NF
Contextual Info: VISHAY VISHAY INTERTECHNOLOGY, INC. Vishay Semiconductors PIN PHOTODIODES and FILTER OPTIONS A Device B Package C Photo Sensitive Area / mm2 D E F ±Ê Ira / ÌA G Recommended IR Emitters PIN Photodiodes without Filter - General Application BPV10 A 0.78 20°

TSOP4838 IR receiver

Abstract: TSAL6200* transmitter IR TSOP4838 TSOP4838 3 mm ir receiver very long range ir remote control ir transmitter receiver sensors TSAL6100 LIGHT TSAL7400 TSOP5700
Contextual Info: VISHAY Vishay Semiconductors General Overview of IR Transmission in Free Ambient Free ambient IR data transmission, IR remote control as well as the most optoelectronic sensors and light barrier systems work with a wavelength of between 870 nm and 950 nm. The emitter and detector components are highly efficient in this near IR wavelength

APPLICATION CIRCUIT OF TSAL4400

Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
Contextual Info: Vishay Semiconductors Safety Reliability and Safety All semiconductor devices have the potential of failing or degrading in ways that could impair the proper operation of safety systems. Well-known circuit techniques are available to protect against and minimize the effects of such occurrences. Examples of

tsta7500

Contextual Info: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AGING OF INFRARED EMITTER COMPONENTS TECHNICAL INFORMATION w w w. v i s h a y. c o m Aging of Infrared Emitter Components INTRODUCTION TYPICAL DEGRADATION OF RADIANT POWER AFTER 4000 h OPERATION DEVICE AGING AND DEVICE

30016

Abstract: TSIP5201 "IR Emitter" TSIP4400
Contextual Info: Tem ic S e m i c o n d u c t o r s Infrared Emitting Diodes Characteristics Package TVpe + /-Ç tr , tf / ns U /mW/sr g Ip/m A VF / V 50 1.2 < 1.6 100 1.3(<1.7) @ Ip /b A Standard IR Emitter GaAs (950 nm) in Plastic Package -— •- - j-'•- CQY36N

TDS05160

Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
Contextual Info: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601

IEC60601-2-22

Abstract: APPLICATION CIRCUIT OF TSAL4400 IEC608251 voting elements CQX48B CQY36N CQY37N IEC60825-1 LD50 TSAL4400
Contextual Info: VISHAY Vishay Semiconductors Safety Toxicity Although gallium arsenide and gallium aluminium arsenide are both arsenic compounds, under normal use conditions they should be considered relatively benign. Both materials are listed by the 1980 NIOH “Toxicology of Materials” with LD50 values Lethal

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2