TP2640N3 Search Results

Contextual Info: TP2640N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)200m @Temp (øC)150# IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55

Contextual Info: Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) BVdgs (max) (max) (min) SO-8 TO-92 DICE+ -350V 15Q -2.0 V -0.7A - TP2635N3 TP2635ND -400V 15Q -2.0 V -0.7A TP2640LG TP2640N3

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: TP2635 TP2640 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) ' d (ON) B V dgs (max) (max) (min) SO-8 TO-92 Diet -350V i5 n -2.0V -0.7A - TP2635N3 TP2635ND

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

A773* Transistor

Abstract: TP2635 TP2635LG TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND A773
Contextual Info: TP2635 TP2640 Supertex inc. Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON b v dgs (max) (max) (min) SO-8 TO-92 DICEt -350V 15£2 -2.0V 0.7A TP2635LG TP2635N3 TP2635ND -400V

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

P2640

Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

IN4625

Abstract: P-Channel mosfet 400v MOSFET 400V 400v p-channel mosfet N-Channel Depletion-Mode MOSFET P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage n-Channel mosfet 400v n channel depletion MOSFET depletion 400V power mosfet
Contextual Info: AN-D27 Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TP2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

Contextual Info: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TP2635

Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A

MOSFET 400V

Abstract: P-Channel Depletion-Mode 400v p-channel mosfet depletion 400V power mosfet Depletion MOSFET depletion power MOSFET 400V P-Channel mosfet 400v P-channel mosfet 500V mosfet transistors low voltage
Contextual Info: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the

Contextual Info: TP2635 TP2640 S u p e rte x inc. Low Thresh old Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R ds on BVdgs (max) (max) -350V 15Q -2.0V -400V 15Q -2.0V Order Number / Package !f b v dss / SO-8 TO-92 DICE* 0.7A TP2635LG TP2635N3

7A, 100v fast recovery diode

Abstract: TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635/TP2640 TP2635 TP2640 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 DICE† -350V 15Ω -2.0V -0.7A – TP2635N3

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

Contextual Info: TP2635 TP2640 I_0W Threshold S iM fM C rtG X in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) SO-8 TO-92 Diet -350V 15& -2.0V -0.7A - TP2635N3 — -400V

Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

a1026

Abstract: TP2640N3-G
Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

IN4625

Abstract: TN2540N8 TP2640N3 P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage MOSFET 400V LND150N3
Contextual Info: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the

TP2635

Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A