SIS902DN Search Results
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Vishay Siliconix SIS902DN-T1-GE3MOSFET 2N-CH 75V 4A PPAK 1212 |
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SIS902DN-T1-GE3 | Reel |
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SIS902DN Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIS902DN-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 75V 4A PPAK 1212-8 | Original |
SIS902DN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiS902DN Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.186 at VGS = 10 V 4e 0.228 at VGS = 4.5 V 4e Qg (Typ.) 2.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS902DN 2002/95/EC SiS902DN-T1-GE3 18-Jul-08 | |
Contextual Info: SiS902DN Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.186 at VGS = 10 V 4e 0.228 at VGS = 4.5 V 4e Qg (Typ.) 2.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS902DN 2002/95/EC SiS902DN-llectual 18-Jul-08 | |
Contextual Info: SiS902DN Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.186 at VGS = 10 V 4e 0.228 at VGS = 4.5 V 4e Qg (Typ.) 2.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS902DN 2002/95/EC SiS902DN-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
AN609Contextual Info: SiS902DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SiS902DN AN609, 31-Mar-09 AN609 | |
SiS902DNContextual Info: SPICE Device Model SiS902DN Vishay Siliconix Dual N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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SiS902DN 18-Jul-08 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |