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    SIS454DN Price and Stock

    Vishay Siliconix SIS454DN-T1-GE3

    MOSFET N-CH 20V 35A PPAK1212-8
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    DigiKey SIS454DN-T1-GE3 Cut Tape 7,459 1
    • 1 $1.53
    • 10 $0.967
    • 100 $1.53
    • 1000 $0.46088
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    SIS454DN-T1-GE3 Digi-Reel 7,459 1
    • 1 $1.53
    • 10 $0.967
    • 100 $1.53
    • 1000 $0.46088
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    SIS454DN-T1-GE3 Reel 6,000 3,000
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    • 10000 $0.40423
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    Bristol Electronics SIS454DN-T1-GE3 1,000 6
    • 1 -
    • 10 $0.9375
    • 100 $0.3516
    • 1000 $0.2625
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    Quest Components SIS454DN-T1-GE3 800
    • 1 $1.25
    • 10 $1.25
    • 100 $0.375
    • 1000 $0.325
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    SIS454DN-T1-GE3 800
    • 1 $1.25
    • 10 $1.25
    • 100 $0.375
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    New Advantage Corporation SIS454DN-T1-GE3 3,000 1
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    • 10000 $0.4662
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    Vishay Intertechnologies SIS454DN-T1-GE3

    Trans MOSFET N-CH 20V 25A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS454DN-T1-GE3)
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    Avnet Americas SIS454DN-T1-GE3 Reel 6,000 17 Weeks 3,000
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    Mouser Electronics SIS454DN-T1-GE3 19,811
    • 1 $1.21
    • 10 $0.812
    • 100 $0.566
    • 1000 $0.419
    • 10000 $0.362
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    Verical SIS454DN-T1-GE3 3,000 3,000
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    Arrow Electronics SIS454DN-T1-GE3 3,000 17 Weeks 3,000
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    Newark SIS454DN-T1-GE3 Bulk 2,324 1
    • 1 $1.05
    • 10 $0.874
    • 100 $0.699
    • 1000 $0.605
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    SIS454DN-T1-GE3 Reel 3,000
    • 1 $0.363
    • 10 $0.363
    • 100 $0.363
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    Quest Components SIS454DN-T1-GE3 1,720
    • 1 $1.25
    • 10 $1.25
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    • 1000 $0.325
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    SIS454DN-T1-GE3 1,720
    • 1 $1.25
    • 10 $1.25
    • 100 $0.375
    • 1000 $0.325
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    TTI SIS454DN-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.363
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    TME SIS454DN-T1-GE3 1
    • 1 $0.92
    • 10 $0.83
    • 100 $0.66
    • 1000 $0.62
    • 10000 $0.62
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    EBV Elektronik SIS454DN-T1-GE3 18 Weeks 3,000
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    Vishay BLH SIS454DN-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIS454DN-T1-GE3 2,150 6
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    • 10 $0.9375
    • 100 $0.3516
    • 1000 $0.2625
    • 10000 $0.2438
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    SIS454DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS454DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 35A 1212-8 PPAK Original PDF

    SIS454DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS454DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SiS454DN 2002/95/EC SiS454DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS454DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiS454DN AN609, 19-May-10

    Untitled

    Abstract: No abstract text available
    Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SiS454DN 2002/95/EC SiS454DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS454DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS454DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SiS454DN 2002/95/EC SiS454DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiS454DN 2002/95/EC SiS454DN-T1-GE3 11-Mar-11

    SiS454

    Abstract: SiS454DN
    Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiS454DN 2002/95/EC SiS454DN-T1-GE3 18-Jul-08 SiS454

    Untitled

    Abstract: No abstract text available
    Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SiS454DN 2002/95/EC SiS454DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TSOP6

    Abstract: SIS454DN-T1-GE3
    Text: SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0037 at VGS = 10 V 35 0.0054 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SiS454DN 2002/95/EC SiS454DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP6

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		PDF VMN-PT0105-1007

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836