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Vishay Siliconix SIR808DP-T1-GE3 MOSFET N-CH 25V 20A PPAK SO-8
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Vishay Intertechnologies SIR808DP-T1-GE3
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Quest Components	SIR808DP-T1-GE3		461			1 $0.912 10 $0.912 100 $0.912 1000 $0.3648 10000 $0.3648	Buy Now

SIR808DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR808DP-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 20A POWERPAK		Original	PDF

SIR808DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiR808DP_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiR808DP AN609, 1555m 2783u 6809m 4813m 5804m 2240u 7492m 23-Mar-11	PDF
67550 Abstract: 0408 G Diode Contextual Info: SPICE Device Model SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR808DP 11-Mar-11 67550 0408 G Diode	PDF
sir808 Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter	Original	SiR808DP 2002/95/EC SiR808DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir808	PDF
Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter	Original	SiR808DP 2002/95/EC SiR808DP-T1-GE3 11-Mar-11	PDF
SIR808DP-T1-GE3 Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter	Original	SiR808DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIR808DP-T1-GE3	PDF
Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 25 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter	Original	SiR808DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SPICE Device Model SiR808DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR808DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter	Original	SiR808DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF