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    SIR402DP Price and Stock

    Vishay Siliconix SIR402DP-T1-GE3

    MOSFET N-CH 30V 35A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR402DP-T1-GE3 Digi-Reel 1
    • 1 $2.62
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    • 100 $2.62
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    SIR402DP-T1-GE3 Reel 3,000
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    • 10000 $0.7625
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    SIR402DP-T1-GE3 Cut Tape 1
    • 1 $2.62
    • 10 $2.62
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    New Advantage Corporation SIR402DP-T1-GE3 42,000 1
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    • 10000 $0.5
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    Vishay Intertechnologies SIR402DP-T1-GE3

    Trans MOSFET N-CH 30V 20.7A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR402DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR402DP-T1-GE3 Reel 17 Weeks 3,000
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    • 10000 $0.80825
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    Mouser Electronics SIR402DP-T1-GE3 10,093
    • 1 $2.1
    • 10 $1.48
    • 100 $1.12
    • 1000 $0.827
    • 10000 $0.748
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    Bristol Electronics SIR402DP-T1-GE3 2,375
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    Quest Components SIR402DP-T1-GE3 1,900
    • 1 $2.724
    • 10 $2.724
    • 100 $2.724
    • 1000 $1.0215
    • 10000 $1.0215
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    TTI SIR402DP-T1-GE3 Reel 3,000
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    • 10000 $0.76
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    TME SIR402DP-T1-GE3 3,000
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    EBV Elektronik SIR402DP-T1-GE3 18 Weeks 3,000
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    Mouser Electronics SIR402DP-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SIR402DP-T1-GE3 640
    • 1 $2.27
    • 10 $2.27
    • 100 $2.27
    • 1000 $0.9364
    • 10000 $0.9364
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    Vishay Intertechnologies SIR402DPT1GE3

    N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 20.7A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIR402DPT1GE3 3,000
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    SIR402DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR402DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A PPAK 8SOIC Original PDF

    SIR402DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN609

    Abstract: SiR402DP 68728
    Text: SiR402DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiR402DP AN609, 15-May-08 AN609 68728

    SiR402DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiR402DP S-82143 15-Sep-08

    SiR402DP

    Abstract: sir402
    Text: SPICE Device Model SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiR402DP 18-Jul-08 sir402

    SiR402DP

    Abstract: SiR402DP-T1-GE3
    Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR402DP 2002/95/EC SiR402DP-T1-GE3 18-Jul-08

    SiR402DP

    Abstract: SiR402DP-T1-GE3 sir402
    Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 12 nC


    Original     		PDF SiR402DP SiR402DP-T1-GE3 18-Jul-08 sir402

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR402DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF SiR402DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiR402DP

    Abstract: SiR402DP-T1-GE3
    Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR402DP 2002/95/EC SiR402DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR402DP 2002/95/EC SiR402DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sir402

    Abstract: No abstract text available
    Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR402DP 2002/95/EC SiR402DP-T1-GE3 11-Mar-11 sir402

    Untitled

    Abstract: No abstract text available
    Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR402DP 2002/95/EC SiR402DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR402DP 2002/95/EC SiR402DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR402DP 2002/95/EC SiR402DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Power MOSFET

    Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
    Text: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4


    Original     		PDF Si4642DY SiE726DF 1-1500uF 47-680uF Power MOSFET mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    MAX17039

    Abstract: C259C foxconn 989 PZ98927-3641-01F SI7658 intel IMVP7 SSL8000000 8050 c34 transistor tdk ferrite cores for smps MPC1055LR36
    Text: 19-4966; Rev 0; 9/09 MAX17039 Evaluation Kit The MAX17039 evaluation kit EV kit demonstrates the high-power, dynamically adjustable, multiphase IMVP-7 notebook application circuit. This DC-DC converter steps down high-voltage batteries and/or AC adapters, generating two precision, low-voltage CPU/


    Original     		PDF MAX17039 MAX17039 MAX8791 MAX17000/MAX17007A/MAX17039 C259C foxconn 989 PZ98927-3641-01F SI7658 intel IMVP7 SSL8000000 8050 c34 transistor tdk ferrite cores for smps MPC1055LR36