SIHLZ14 Search Results
SIHLZ14 Datasheets Context Search
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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IRLZ14, SiHLZ14 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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IRLZ14, SiHLZ14 O-220AB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC O-262) | |
irlz14Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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IRLZ14, SiHLZ14 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irlz14 | |
SiHLZ14S
Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 18-Jul-08 IRLZ14 IRLZ14L IRLZ14S SiHLZ14S-E3 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC O-262) | |
IRLZ14Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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IRLZ14, SiHLZ14 O-220 O-220 18-Jul-08 IRLZ14 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 18-Jul-08 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 11-Mar-11 | |
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Contextual Info: IRLZ14_RC, SiHLZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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IRLZ14 SiHLZ14 AN609, CONFIGURATI5-Oct-10 8649m 6211m 0526u 9391m | |
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Contextual Info: IRLZ14S_RC, IRLZ14L_RC, SiHLZ14S_RC, SiHLZ14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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IRLZ14S IRLZ14L SiHLZ14S SiHLZ14L AN609, 8649m 6211m 0526u | |
IRLZ14L
Abstract: IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14STR-E3
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 11-Mar-11 IRLZ14L IRLZ14S SiHLZ14STR-E3 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize |
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L IRLZ14S/SiHLZ14S) IRLZ14L/SiHLZ14L) 12-Mar-07 | |
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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IRLZ14, SiHLZ14 O-220 O-220 12-Mar-07 | |
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IRLZ14
Abstract: IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14S-E3
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 18-Jul-08 IRLZ14 IRLZ14L IRLZ14S SiHLZ14S-E3 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
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IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 2011/65/EU | |
IRLZ14
Abstract: SiHLZ14 SiHLZ14-E3
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IRLZ14, SiHLZ14 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRLZ14 SiHLZ14-E3 | |
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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IRLZ14, SiHLZ14 O-220AB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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IRLZ14, SiHLZ14 2002/95/EC O-220AB O-220AB 11-Mar-11 | |
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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IRLZ14, SiHLZ14 O-220AB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRLZ14
Abstract: SiHLZ14 SiHLZ14-E3
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IRLZ14, SiHLZ14 O-220 2002/95/EC O-220 18-Jul-08 IRLZ14 SiHLZ14-E3 | |