IRLZ14 Search Results

Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature

1RFZ44

Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
Contextual Info: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS

IRLZ14

Contextual Info: International k Rectifier 4A55HS2 0 0 1 5 ^ 5*13 11 NR PD-9.556C IRLZ14 HEXFET® Power MOSFET b5E D INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching

marking F53

Abstract: AN-994 IRLZ14 IRLZ14L IRLZ14S
Contextual Info: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier

1XYS

Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR

IRLZ14

Abstract: 556C
Contextual Info: International Rectifier P D -9 .5 5 6 C IRLZ14 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive ^ dss - 60V • RDS on Specified at V gs =4V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

irlz14

Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature

SiHLZ14S

Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize

Contextual Info: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

AN-994

Abstract: IRLZ14 IRLZ14L IRLZ14S
Contextual Info: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier

IRLZ14

Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

IRlZ14

Abstract: IRLZ10
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRLZ14/10 FEATURES • Low er R ds< on • Excellent voltage stability • Fast sw itching spe eds • Ru gg ed polysilicon gate cell structure • Lo w er input ca p acita n ce • Extended sa fe operating area • Improved high tem perature reliability

Contextual Info: IRLZ14_RC, SiHLZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRLZ14S_RC, IRLZ14L_RC, SiHLZ14S_RC, SiHLZ14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

AN-994

Abstract: IRLZ14 IRLZ14L IRLZ14S
Contextual Info: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier

IRLZ14L

Abstract: IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14STR-E3
Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize

Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature

Contextual Info: PD - 95457 IRLZ14PbF • Lead-Free 1 IRLZ14PbF 2 IRLZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)