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    SIHG30N60E Search Results

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    SIHG30N60E Price and Stock

    Vishay Siliconix SIHG30N60E-GE3

    MOSFET N-CH 600V 29A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG30N60E-GE3 Tube 500 1
    • 1 $7.01
    • 10 $4.731
    • 100 $7.01
    • 1000 $2.875
    • 10000 $2.875
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    Bristol Electronics SIHG30N60E-GE3 225
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    Quest Components SIHG30N60E-GE3 180
    • 1 $10.476
    • 10 $10.476
    • 100 $6.4602
    • 1000 $5.7618
    • 10000 $5.7618
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    Vishay Siliconix SIHG30N60E-E3

    MOSFET N-CH 600V 29A TO247AC
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    DigiKey SIHG30N60E-E3 Tube
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    Vishay Intertechnologies SIHG30N60E-GE3

    N-CHANNEL 600V - Bulk (Alt: 68W7051)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHG30N60E-GE3 Bulk 9 Weeks, 3 Days 1
    • 1 $3.73
    • 10 $3.73
    • 100 $3.73
    • 1000 $3.29
    • 10000 $3.29
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    SIHG30N60E-GE3 Reel 500
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    • 1000 $2.82903
    • 10000 $2.70588
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    Mouser Electronics SIHG30N60E-GE3 1,035
    • 1 $6.23
    • 10 $4.72
    • 100 $3.45
    • 1000 $3.29
    • 10000 $3.29
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    TTI SIHG30N60E-GE3 Tube 10,000 50
    • 1 -
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    • 100 $3.44
    • 1000 $2.84
    • 10000 $2.84
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    EBV Elektronik SIHG30N60E-GE3 75 20 Weeks 25
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    New Advantage Corporation SIHG30N60E-GE3 50 1
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    • 100 $5.89
    • 1000 $5.89
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    Vishay Intertechnologies SIHG30N60E-E3

    N-CHANNEL 600V - Rail/Tube (Alt: SIHG30N60E-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHG30N60E-E3 Tube 19 Weeks 500
    • 1 -
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    • 1000 $2.829
    • 10000 $2.7048
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    Mouser Electronics SIHG30N60E-E3
    • 1 -
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    • 1000 $3.75
    • 10000 $3.75
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    Bristol Electronics SIHG30N60E-E3 100 1
    • 1 $9.828
    • 10 $4.914
    • 100 $4.2585
    • 1000 $4.2585
    • 10000 $4.2585
    		Buy Now
    Quest Components SIHG30N60E-E3 80
    • 1 $13.1625
    • 10 $6.5813
    • 100 $6.1425
    • 1000 $6.1425
    • 10000 $6.1425
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    Vishay Intertechnologies SIHG30N60EGE3

    E SERIES POWER MOSFET Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHG30N60EGE3 1,000
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    Find more SIHG30N60E price and stock on Findchips.com

    SIHG30N60E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG30N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO247AC Original PDF
    SIHG30N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO247AC Original PDF

    SIHG30N60E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original     		SiHG30N60E 2002/95/EC O-247AC 11-Mar-11 PDF

    SIHG30N60E

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHG30N60E AN609, 5779m 3451m 9055m 7699u 10-Feb-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Generation Two


    Original     		SiHG30N60E 2002/95/EC O-247AC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF