Untitled
Abstract: No abstract text available
Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s
|
Original
|
PDF
|
IRF9Z22,
SiHF9Z22
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s
|
Original
|
PDF
|
IRF9Z22,
SiHF9Z22
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
IRF9Z22
Abstract: No abstract text available
Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single S P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current
|
Original
|
PDF
|
IRF9Z22,
SiHF9Z22
O-220
18-Jul-08
IRF9Z22
|
Untitled
Abstract: No abstract text available
Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s
|
Original
|
PDF
|
IRF9Z22,
SiHF9Z22
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s
|
Original
|
PDF
|
IRF9Z22,
SiHF9Z22
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
IRF9Z22,SiHF9Z22_RC
Abstract: SIHF9Z22 760167
Text: IRF9Z22,SiHF9Z22_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
IRF9Z22
SiHF9Z22
AN609,
1672m
4327m
2001m
2791m
8787m
3904m
1208u
IRF9Z22,SiHF9Z22_RC
760167
|
Untitled
Abstract: No abstract text available
Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s
|
Original
|
PDF
|
IRF9Z22,
SiHF9Z22
18-Jul-08
|
IRF9Z20
Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3
Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching
|
Original
|
PDF
|
IRF9Z20,
SiHF9Z20
O-220AB
2002/95/EC
11-Mar-11
IRF9Z20
IRF9Z22
SiHF9Z20-E3
|
Untitled
Abstract: No abstract text available
Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching
|
Original
|
PDF
|
IRF9Z20,
SiHF9Z20
O-220AB
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current
|
Original
|
PDF
|
IRF9Z20,
SiHF9Z20
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRF9Z20
Abstract: No abstract text available
Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching
|
Original
|
PDF
|
IRF9Z20,
SiHF9Z20
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9Z20
|
IRF9Z20
Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3 mosfet switched pulse circuit
Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current
|
Original
|
PDF
|
IRF9Z20,
SiHF9Z20
O-220
18-Jul-08
IRF9Z20
IRF9Z22
SiHF9Z20-E3
mosfet switched pulse circuit
|