IRF9Z22 Search Results

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

IRF9Z22

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single S P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

IRF9511

Abstract: IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 P-CHANNEL B Vdss V Part Number ID(onXA) RDS(onXn) -4 .0 0 -4 .7 0 -8 .9 0 -9 .8 0 -15 .0 0 -18 .0 0 0.70 0.50 0.33 0.28 0.21 0.14 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 - 60.00 -2 .5 0 -3 .0 0 -4 .0 0 -4 .7 0

IRF9Z22,SiHF9Z22_RC

Abstract: SIHF9Z22 760167
Contextual Info: IRF9Z22,SiHF9Z22_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

IRF9Z20

Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3
Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching

THERMISTOR NTC 100K

Abstract: tip42a 2N7000 "direct replacement"
Contextual Info: U-509 Using the bq2007 Enhanced Features for Fast Charge voltage threshold MCV . To avoid possible premature fast-charge termination when charging batteries after long periods of storage, the bq2007 disables PVD, and -∆V detection during a short “hold-off” period at the start

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB

SOT-123

Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Contextual Info: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0

Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching

24v dc power supply with uc3842

Abstract: unitrode Applications Note U-96A UC3842 note buck converter non isolated 24v to 12v dc power supply with uc3842 uc3842 dc/dc converter 24v application circuits U-96A UCC3804 application UC3842 application 24V uc3842 unitrode 100 watt boost uc3842 application note
Contextual Info: APPLICATION NOTE U-133A UCC 3800/1/2/3/4/5 BiCMOS CURRENT MODE CONTROL ICs BILL ANDREYCAK INTRODUCTION Power supply design has become increasingly more challenging as engineers confront the difficulties of obtaining higher power density, improved performance and lower cost. The control for many of these

1rf730

Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
Contextual Info: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5

Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current

irf9z20

Contextual Info: P-CHANNEL POWER MOSFETS IRF9Z20/Z22 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

P3055E

Abstract: motorola p3055e p23p06 2N3804 9439 2n P3055EL zener 1n 4148 1N4148H av dc tec ne 5231B diode
Contextual Info: B EN C H M AR Q _ Using the bq2005 to Control Fast Charge Introduction T his application note describes th e use a n d functions of th e bq2005 con tro llin g a c u rre n t source to fa st ch arg e N iC d o r N iM H b a tte rie s. T h e bq2005 m ay also se rv e a s

z24 mosfet

Abstract: IRF9Z25 IRF9Z20 IRF9Z22 IRF9Z24
Contextual Info: SAMSUNG ELECTRONICS INC b4E D inrv£.¿m¿.¿s IRF9Z20/Z22 • 7Tb4142 DülSSTH 4^5 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • SMGK TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF9Z20

Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching

UC3842 note buck converter non isolated

Abstract: uc3842 unitrode 100 watt U-96A boost uc3842 application note UC3842 application 24V UCC3801 schematic unitrode Applications Note U-96A ucc3804 24v dc power supply with uc3842 buck uc3842 application note
Contextual Info: APPLICATION NOTE U-133A UCC 3800/1/2/3/4/5 BiCMOS CURRENT MODE CONTROL ICs BILL ANDREYCAK INTRODUCTION Power supply design has become increasingly more challenging as engineers confront the difficulties of obtaining higher power density, improved performance and lower cost. The control for many of these

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

IC LM317 CIRCUITS

Abstract: PHILIPS ntc 640 197-103LA6-A01 keystone carbon b*137 tco thermistor 78L05 datasheet benchmarq Keystone RL0703-5744-103-S1 philips carbon film resistor
Contextual Info: Using the bq2003 to Control Fast Charge The bq2003 monitors the voltage across the battery to detect -∆V, which is a very reliable charge terminator for NiCd batteries. -∆V detection in the bq2003 may be temporarily disabled during periods when the charge current fluctuates