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    SIHB22N Price and Stock

    Vishay Siliconix SIHB22N65E-T1-GE3

    N-CHANNEL 650V
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    DigiKey SIHB22N65E-T1-GE3 Cut Tape 752 1
    • 1 $5.66
    • 10 $3.78
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    SIHB22N65E-T1-GE3 Digi-Reel 1
    • 1 $5.66
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    SIHB22N65E-T1-GE3 Reel 800
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    Vishay Siliconix SIHB22N60ET1-GE3

    MOSFET N-CH 600V 21A TO263
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    DigiKey SIHB22N60ET1-GE3 Digi-Reel 520 1
    • 1 $4.52
    • 10 $2.989
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    SIHB22N60ET1-GE3 Cut Tape 520 1
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    SIHB22N60ET1-GE3 Reel 800
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    • 10000 $1.6
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    Vishay Siliconix SIHB22N60S-E3

    MOSFET N-CH 600V 22A TO263
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    DigiKey SIHB22N60S-E3 Tube 1,000
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    Vishay Siliconix SIHB22N60E-E3

    MOSFET N-CH 600V 21A D2PAK
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    DigiKey SIHB22N60E-E3 Tube 1,000
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    • 1000 $1.85
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    Vishay Siliconix SIHB22N60S-GE3

    MOSFET N-CH 600V 22A D2PAK
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    Find more SIHB22N price and stock on Findchips.com

    SIHB22N Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB22N60AE-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A D2PAK Original PDF
    SIHB22N60AEL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V Original PDF
    SIHB22N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A D2PAK Original PDF
    SIHB22N60EF-GE3 Vishay Siliconix MOSFET N-CH 600V 19A D2PAK Original PDF
    SIHB22N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A D2PAK Original PDF
    SIHB22N60EL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263 Original PDF
    SIHB22N60ET1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263 Original PDF
    SIHB22N60ET5-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263 Original PDF
    SIHB22N60S-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A D2PAK Original PDF
    SIHB22N60S-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V TO263 Original PDF
    SIHB22N65E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A D2PAK Original PDF
    SIHB22N65E-T1-GE3 Vishay Siliconix N-CHANNEL 650V Original PDF

    SIHB22N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0949

    Abstract: SiHB22N60S-E3
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 98 Qgs (nC) 17 Qgd (nC) 25 Configuration • High EAR Capability


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 11-Mar-11 0949 SiHB22N60S-E3

    SiHB22N60S-E3

    Abstract: SIHB22N60S
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		PDF SiHB22N60S O-263) 2002/95/EC SiHB22N60S-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIHB22N60S

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC


    Original     		PDF SiHG22N SiHP22N SiHB22N SiHF22N O-220, O-247, O-220F, O-263 O-263)

    s13050

    Abstract: S-1305
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s13050 S-1305

    SiHB22N60S-E3

    Abstract: No abstract text available
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		PDF SiHB22N60S O-263) 2002/95/EC SiHB22N60S-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHB22N60E O-263) 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D D2PAK (TO-263)


    Original     		PDF SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIHB22N60S

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)


    Original     		PDF SiHB22N60S O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiHB22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 700 VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single APPLICATIONS


    Original     		PDF SiHB22N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB22N65E AN609, 7606u 6283m 6682m 0922u 23-Jul-14

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 700 VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single D APPLICATIONS


    Original     		PDF SiHB22N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    sihb22n60sge3

    Abstract: SIHB22N60S
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihb22n60sge3

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two


    Original     		PDF SiHB22N60E 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHB22N60S-E3

    Abstract: SIHB22N60S
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) () • Halogen-free According to IEC 61249-2-21 Definition 650 VGS = 10 V Qg (Max.) (nC) 0.190 • High EAR Capability 98 Qgs (nC) 17 Qgd (nC) 25 Configuration


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 18-Jul-08 SiHB22N60S-E3

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E