SIHB22N65E Search Results
SIHB22N65E Price and Stock
Vishay Siliconix SIHB22N65E-T1-GE3N-CHANNEL 650V |
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SIHB22N65E-T1-GE3 | Cut Tape | 752 | 1 |
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Vishay Siliconix SIHB22N65E-GE3MOSFET N-CH 650V 22A D2PAK |
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SIHB22N65E-GE3 | Tube | 1,000 |
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Vishay Intertechnologies SIHB22N65E- Tape and Reel (Alt: SIHB22N65E) |
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SIHB22N65E | Reel | 111 Weeks | 1,000 |
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Vishay Intertechnologies SIHB22N65E-T1-GE3N-CHANNEL 650V - Tape and Reel (Alt: SIHB22N65E-T1-GE3) |
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SIHB22N65E-T1-GE3 | Reel | 20 Weeks | 800 |
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SIHB22N65E-T1-GE3 |
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SIHB22N65E-T1-GE3 | 800 | 34 Weeks | 800 |
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SIHB22N65E-T1-GE3 | Bulk | 800 |
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SIHB22N65E-T1-GE3 | Reel | 46,400 | 800 |
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Vishay Intertechnologies SIHB22N65E-GE3N-CHANNEL 650V - Tape and Reel (Alt: SIHB22N65E-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHB22N65E-GE3 | Reel | 20 Weeks | 1,000 |
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SIHB22N65E-GE3 |
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SIHB22N65E-GE3 | 1 |
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SIHB22N65E-GE3 | 21 Weeks | 50 |
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SIHB22N65E Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIHB22N65E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A D2PAK | Original | |||
SIHB22N65E-T1-GE3 | Vishay Siliconix | N-CHANNEL 650V | Original |
SIHB22N65E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 700 VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single APPLICATIONS |
Original |
SiHB22N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHB22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHB22N65E AN609, 7606u 6283m 6682m 0922u 23-Jul-14 | |
Contextual Info: SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 700 VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single D APPLICATIONS |
Original |
SiHB22N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |