SIE868DF Search Results
SIE868DF Price and Stock
Vishay Siliconix SIE868DF-T1-GE3MOSFET N-CH 40V 60A 10POLARPAK |
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SIE868DF-T1-GE3 | Reel |
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Vishay Intertechnologies SIE868DF-T1-GE3Trans MOSFET NCH 40V 35A 10Pin PolarPAK TR (Alt: SIE868DF-T1-GE3) |
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SIE868DF-T1-GE3 | 143 Weeks | 3,000 |
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SIE868DF Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIE868DF-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A POLARPAK | Original |
SIE868DF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SiE868DF www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiE868DF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiE868DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for |
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SiE868DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SiE868DFContextual Info: New Product SiE868DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for |
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SiE868DF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiE868DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for |
Original |
SiE868DF 2002/95/EC 11-Mar-11 | |
Contextual Info: New Product SiE868DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for |
Original |
SiE868DF 2002/95/EC 7294emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
4580 N
Abstract: AN609
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SiE868DF AN609, 02-Jun-09 4580 N AN609 | |
Contextual Info: SPICE Device Model SiE868DF Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiE868DF 18-Jul-08 | |
Contextual Info: New Product SiE868DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for |
Original |
SiE868DF 2002/95/EC 10lectual 18-Jul-08 | |
603al
Abstract: irfb3306 TMC603A schematic diagram 48v bldc motor speed controller smd diode marking BM 06 motor Speed Sensor circuit diagram using 555 timer ic si7164 Zener diode smd marking e2 smd TRANSISTOR H2 MARKING CODE TMC603
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TMC603A 2010-May-14) TMC603A TMC603 603al irfb3306 schematic diagram 48v bldc motor speed controller smd diode marking BM 06 motor Speed Sensor circuit diagram using 555 timer ic si7164 Zener diode smd marking e2 smd TRANSISTOR H2 MARKING CODE | |
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs Pola rPA K M O S F ET s features • Leadframe and plastic encapsulation construction - Provides better die protection and reliability - Easier manufacturing handling - Fixed footprint and pad layout independent of die size, ≤ 100 V |
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VMN-PT0052-1002 | |
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating |
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VMN-PT0105-1007 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
R312Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC I INNOVAT O L OGY PolarPAK N HN POWER MOSFETs O 19 62-2012 PolarPAK® Brings Standard Packaging to Double-Sided Cooling FEATURES • Leadframe and plastic encapsulation construction |
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VMN-PT0052-1209 R312 | |
BZV55C12Contextual Info: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features |
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TMC603A 2010-May-14) TMC603A TMC603 BZV55C12 | |
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