SIB488DK Search Results

SIB488DK Price and Stock

Filter by Manufacturer


Vishay Siliconix SIB488DK-T1-GE3 MOSFET N-CH 12V 9A PPAK SC75-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIB488DK-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIB488DK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIB488DK-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 9A SC75-6		Original	PDF

SIB488DK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SiB488DK Contextual Info: SPICE Device Model SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiB488DK 18-Jul-08	PDF
Contextual Info: New Product SiB488DK Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiB488DK SC-75 2002/95/EC SC-75-6L-Single SiB488DK-T1-GE3 18-Jul-08	PDF
Contextual Info: SPICE Device Model SiB488DK www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiB488DK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 12 ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiB488DK SC-75 2002/95/EC SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
MOSFET 1052 Abstract: SC-75 Contextual Info: New Product SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiB488DK SC-75 2002/95/EC SC-75-6L-Single 18-Jul-08 MOSFET 1052	PDF
Contextual Info: New Product SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiB488DK SC-75 2002/95/EC SC-75-6L-Single SiB488DK-T1-GE3 11-Mar-11	PDF
Contextual Info: New Product SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiB488DK SC-75 2002/95/EC SC-75-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
AN609 Contextual Info: SiB488DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiB488DK AN609, 05-Feb-10 AN609	PDF
S10 9b diode Contextual Info: New Product SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiB488DK SC-75 2002/95/EC SC-75-6L-Single SiB488DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S10 9b diode	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with	Original	SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK	PDF
SiB914 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with	Original	SC-75 SC-75 SC-75, space-const19 com/mosfets/powerpak-sc-75-package/ VMN-PT0196-1209 SiB914	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
SiB4500BDY Abstract: IDTP9035 OM350 PJ-018AH 6.3h 250v C2012X5R1E106M 60014f NQG48 WT-5050 32 pins tqfn 5x5 footprint Contextual Info: Single-Chip 5V Wireless Power Transmitter IC for TX-A5 and A11 Product Datasheet IDTP9035 Features Description 5W Solution for Wireless Power Consortium WPC -compliant power transmitter design A5/A11 Conforms to WPC specification version 1.1 specifications	Original	IDTP9035 IDTP9035 A5/A11 110kHz 205kHz SiB4500BDY OM350 PJ-018AH 6.3h 250v C2012X5R1E106M 60014f NQG48 WT-5050 32 pins tqfn 5x5 footprint	PDF