SI7454DDP Search Results
SI7454DDP Price and Stock
Vishay Siliconix SI7454DDP-T1-GE3MOSFET N-CH 100V 21A PPAK SO-8 |
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SI7454DDP-T1-GE3 | Digi-Reel | 2,826 | 1 |
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Vishay Intertechnologies SI7454DDP-T1-GE3Trans MOSFET N-CH 100V 7.9A 8-Pin PowerPAK SO - Product that comes on tape, but is not reeled (Alt: 70AC6512) |
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SI7454DDP-T1-GE3 | Ammo Pack | 49 Weeks, 4 Days | 1 |
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SI7454DDP-T1-GE3 | 50,356 |
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SI7454DDP-T1-GE3 | 3,000 | 3,000 |
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SI7454DDP-T1-GE3 | Cut Tape | 2,785 | 1 |
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SI7454DDP-T1-GE3 | Reel | 3,000 |
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SI7454DDP-T1-GE3 | 29 Weeks | 3,000 |
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SI7454DDP-T1-GE3 | 200 | 1 |
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SI7454DDP-T1-GE3 | 16,813 |
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Vishay Huntington SI7454DDP-T1-GE3MOSFET N-CH 100V 21A PPAK SO-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7454DDP-T1-GE3 | 74,112 |
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SI7454DDP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI7454DDP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 21A PPAK SO-8 | Original |
SI7454DDP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si7454DDPContextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8 |
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Si7454DDP Si7454DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8 |
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Si7454DDP Si7454DDP-T1-Gelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
1.0964Contextual Info: Si7454DDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si7454DDP AN609, 8794m 2992m 4748m 4380m 0055u 7815m 9613u 0296m 1.0964 | |
Contextual Info: SPICE Device Model Si7454DDP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si7454DDP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8 |
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Si7454DDP Si7454DDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8 |
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Si7454DDP Si7454DDP-T1-Gelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
so8 footprint
Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
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SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit |
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SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |