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    SI7141DP Price and Stock

    Vishay Siliconix SI7141DP-T1-GE3

    MOSFET P-CH 20V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7141DP-T1-GE3 Cut Tape 17,935 1
    • 1 $3.05
    • 10 $1.98
    • 100 $3.05
    • 1000 $1.02502
    • 10000 $1.02502
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    SI7141DP-T1-GE3 Digi-Reel 17,935 1
    • 1 $3.05
    • 10 $1.98
    • 100 $3.05
    • 1000 $1.02502
    • 10000 $1.02502
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    SI7141DP-T1-GE3 Reel 15,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.9375
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    Bristol Electronics SI7141DP-T1-GE3 14 3
    • 1 -
    • 10 $1.6875
    • 100 $1.6875
    • 1000 $1.6875
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    Quest Components SI7141DP-T1-GE3 11
    • 1 $3
    • 10 $2.25
    • 100 $1.875
    • 1000 $1.875
    • 10000 $1.875
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    Vishay Intertechnologies SI7141DP-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI7141DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7141DP-T1-GE3 Reel 24,000 17 Weeks 3,000
    • 1 -
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    • 10000 $0.92251
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    SI7141DP-T1-GE3 Ammo Pack 3,000
    • 1 $2.31
    • 10 $1.94
    • 100 $1.56
    • 1000 $1.56
    • 10000 $1.56
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    Mouser Electronics SI7141DP-T1-GE3 39,839
    • 1 $2.78
    • 10 $1.85
    • 100 $1.31
    • 1000 $1.08
    • 10000 $1.08
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    Newark SI7141DP-T1-GE3 Cut Tape 1,487 1
    • 1 $2.31
    • 10 $1.94
    • 100 $1.56
    • 1000 $1.51
    • 10000 $1.51
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    SI7141DP-T1-GE3 Reel 1
    • 1 $1.29
    • 10 $1.29
    • 100 $1.29
    • 1000 $1.22
    • 10000 $0.96
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    Quest Components SI7141DP-T1-GE3 2,400
    • 1 $2.8124
    • 10 $2.8124
    • 100 $2.8124
    • 1000 $1.0547
    • 10000 $1.0547
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    TTI SI7141DP-T1-GE3 Reel 48,000 3,000
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    • 10000 $0.94
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    Avnet Asia SI7141DP-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SI7141DP-T1-GE3 18 Weeks 3,000
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    IBS Electronics SI7141DP-T1-GE3 3,000 306
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    • 1000 $1.417
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    Vishay Intertechnologies SI7141DP-T1-GE3.

    Mosfet, P Channel, -20V, -60A, Powerpak So-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:104W Rohs Compliant: Yes |Vishay SI7141DP-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI7141DP-T1-GE3. Reel 3,000
    • 1 $0.938
    • 10 $0.938
    • 100 $0.938
    • 1000 $0.938
    • 10000 $0.938
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    SI7141DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7141DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 60A 8-SOIC Original PDF

    SI7141DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7141

    Abstract: Si7141DP-T1-GE3 Si7141DP
    Text: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7141DP 2002/95/EC Si7141DP-T1-GE3 18-Jul-08 Si7141

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7141DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7141DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7141DP 2002/95/EC Si7141DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    82386

    Abstract: AN609 Si7141DP
    Text: Si7141DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7141DP AN609, 11-Nov-09 82386 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7141DP 2002/95/EC Si7141DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7141DP 2002/95/EC Si7141DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


    Original     		PDF SC-75 VMN-PT0197-1006 SI4497