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    SI6802DQ Search Results

    SI6802DQ Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si6802DQ Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    Si6802DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET Original PDF
    SI6802DQ-DS Vishay Telefunken DS-Spice Model for Si6802DQ Original PDF
    Si6802DQ SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI6802DQ-T1 Vishay Intertechnology N-Channel, Reduced Qg , Fast Switching MOSFET Original PDF

    SI6802DQ Datasheets Context Search

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    Si6802DQ

    Abstract: No abstract text available
    Text: Si6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6802DQ G *Source Pins 2, 3, 6, and 7 must be tied common.


    Original
    PDF Si6802DQ S-49520--Rev. 18-Dec-96

    Si6802DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6802DQ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si6802DQ 25-Feb-99

    Untitled

    Abstract: No abstract text available
    Text: Si6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 RDS(ON) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D 1 S 2 S 3 G 4 D Si6802DQ 8 D 7 S 6 S 5 D G *Source Pins 2, 3, 6, and 7 must be tied common.


    Original
    PDF Si6802DQ S-49520--Rev. 18-Dec-96

    Si6802DQ

    Abstract: No abstract text available
    Text: Limited Distribution Any Revision/Distribution Must Be Authorized By: Jim Harnden Si6802DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D S S G 1 D 2 8 Si6802DQ


    Original
    PDF Si6802DQ S-46976--Rev. 15-Apr-96

    Si6802DQ

    Abstract: No abstract text available
    Text: Si6802DQ N-Channel, Reduced Qg, Fast Switching MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D S S G 1 D 2 8 Si6802DQ 7 3 6 4 5 D S S D G *Source Pins 2, 3, 6, and 7 must be tied common. Top View


    Original
    PDF Si6802DQ S-49520--Rev. 18-Dec-96

    Si6802DQ

    Abstract: No abstract text available
    Text: Si6802DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D S S G 1 D 2 8 Si6802DQ 7 3 6 4 5 D S S D G *Source Pins 2, 3, 6, and 7 must be tied common. Top View S* N-Channel MOSFET


    Original
    PDF Si6802DQ S-49633--Rev. 23-Aug-96

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


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    PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


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    PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


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    PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si6802DQ Semiconductors N-Channel, Reduced Qg, Fast Switching MOSFET Product Summary V d s V r D S (o n ) 20 I d (A ) (S3) 0.075 @ VGS = 4.5 V ± 3 .3 0.110 @ VGS= 3.0 V ± 2 .7 TSSO P-8 n . • s E s E 0 [T 71 D d 3 S S i6 8 0 2 D Q o-Jm G O- ~n s


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    PDF Si6802DQ S-49520â 18-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: _ SÌ6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET oS V DS IV RDS ON) (Q) I d (A) 0.075 @ VGS = 4.5 V ±3.3 0 110 V q S = 3.0 V ±2.7 20 TSSO P-8 •J a ‘ Source Pins 2, 3, 6. and 7 must be tied common.


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    PDF 6802DQ Si6802DQ S-49520-- 18-Dec-96