SI5855CDC Search Results

Si5855CDC

Contextual Info: SPICE Device Model Si5855CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

9806

Abstract: 3771 8727 AN609
Contextual Info: Si5855CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

SI5855CDC-T1

Abstract: Si5855CDC-T1-E3 68910
Contextual Info: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

S-8229

Abstract: SI5855CDC
Contextual Info: Si5855CDC Vishay Siliconix P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • LITTLE FOOT Plus Power MOSFET

Si5855DC

Abstract: Si5855CDC-T1-E3 Si5855CDC SI5855CDC-T1 SI5855DC-T1 Si5855DC-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si5855CDC vs. Si5855DC Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode 1206-8 ChipFET Identical Part Number Replacements: Si5855CDC-T1-E3 replaces Si5855DC-T1-E3 Si5855CDC-T1-E3 replaces Si5855DC-T1

Contextual Info: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 20 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs