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    SI5515CDC Search Results

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    SI5515CDC Price and Stock

    Vishay Siliconix SI5515CDC-T1-GE3

    MOSFET N/P-CH 20V 4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5515CDC-T1-GE3 Reel 9,000 3,000
    • 1 -
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    • 10000 $0.3076
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    Vishay Siliconix SI5515CDC-T1-E3

    MOSFET N/P-CH 20V 4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5515CDC-T1-E3 Cut Tape 5,718 1
    • 1 $1.21
    • 10 $0.761
    • 100 $1.21
    • 1000 $0.35332
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    SI5515CDC-T1-E3 Digi-Reel 5,718 1
    • 1 $1.21
    • 10 $0.761
    • 100 $1.21
    • 1000 $0.35332
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    SI5515CDC-T1-E3 Reel 3,000 3,000
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    Vishay Intertechnologies SI5515CDC-T1-GE3

    Transistor MOSFET Array N-CH/P-CH 20V 4A 8-Pin Chip FET T/R - Bulk (Alt: 97W2671)
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    Avnet Americas SI5515CDC-T1-GE3 Bulk 18 Weeks, 3 Days 1
    • 1 $0.857
    • 10 $0.746
    • 100 $0.535
    • 1000 $0.535
    • 10000 $0.535
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    SI5515CDC-T1-GE3 Reel 18 Weeks 3,000
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    • 10000 $0.2583
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    Mouser Electronics SI5515CDC-T1-GE3 41,500
    • 1 $0.93
    • 10 $0.676
    • 100 $0.502
    • 1000 $0.347
    • 10000 $0.262
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    Verical SI5515CDC-T1-GE3 3,000 3,000
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    SI5515CDC-T1-GE3 3,000 3,000
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    Arrow Electronics SI5515CDC-T1-GE3 3,000 18 Weeks 3,000
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    SI5515CDC-T1-GE3 3,000 18 Weeks 3,000
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    Newark SI5515CDC-T1-GE3 Bulk 112 1
    • 1 $0.417
    • 10 $0.417
    • 100 $0.382
    • 1000 $0.353
    • 10000 $0.353
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    TTI SI5515CDC-T1-GE3 Reel 15,000 3,000
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    • 10000 $0.268
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    Avnet Asia SI5515CDC-T1-GE3 23 Weeks 3,000
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    EBV Elektronik SI5515CDC-T1-GE3 22 Weeks 3,000
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    Vishay Intertechnologies SI5515CDC-T1-E3

    Transistor MOSFET Array N-CH/P-CH 20V 4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5515CDC-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI5515CDC-T1-E3 Reel 18 Weeks 3,000
    • 1 -
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    • 10000 $0.2583
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    Mouser Electronics SI5515CDC-T1-E3 3,365
    • 1 $1.1
    • 10 $0.741
    • 100 $0.494
    • 1000 $0.35
    • 10000 $0.262
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    Verical SI5515CDC-T1-E3 3,000 3,000
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    • 10000 $0.2709
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    Arrow Electronics SI5515CDC-T1-E3 3,000 18 Weeks 3,000
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    • 10000 $0.2701
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    Newark SI5515CDC-T1-E3 Cut Tape 3,000
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    TTI SI5515CDC-T1-E3 Reel 3,000
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    • 10000 $0.268
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    Chip 1 Exchange SI5515CDC-T1-E3 220
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    EBV Elektronik SI5515CDC-T1-E3 22 Weeks 3,000
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    New Advantage Corporation SI5515CDC-T1-E3 3,000 1
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    • 10000 $0.4887
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    Vishay Huntington SI5515CDC

    N- and P-Channel 20-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI5515CDC 42,000
    • 1 -
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    • 100 $2.943
    • 1000 $2.638
    • 10000 $2.638
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    Find more SI5515CDC price and stock on Findchips.com

    SI5515CDC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5515CDC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8 Original PDF
    SI5515CDC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8 Original PDF

    SI5515CDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code g1

    Abstract: mil 43
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code g1 mil 43

    Untitled

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5515CDC

    Abstract: 1206-8 chipfet
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g 0.050 at VGS = 1.8 V g 4 • TrenchFET Power MOSFETs


    Original     		PDF Si5515CDC Si5515CDC-T1-E3 18-Jul-08 1206-8 chipfet

    Untitled

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 11-Mar-11

    specification Note U-96

    Abstract: AN609 Si5515CDC 14560
    Text: Si5515CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si5515CDC AN609, 16-Jul-08 specification Note U-96 AN609 14560

    Si5515CDC

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 11-Mar-11

    Si5515DC-T1-E3

    Abstract: Si5515CDC Si5515DC 42 - 10 n-ch
    Text: Specification Comparison Vishay Siliconix Si5515CDC vs. Si5515DC Description: Package: Pin Out: N- and P-Channel, 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5515CDC-T1-E3 replaces Si5515DC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5515CDC Si5515DC Si5515CDC-T1-E3 Si5515DC-T1-E3 16-Jul-09 42 - 10 n-ch

    Si5515CDC

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 18-Jul-08

    Si5515CDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5515CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si5515CDC 18-Jul-08

    smd transistor m6

    Abstract: N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor
    Text: Active Cell Balancing Methods for Li-Ion Battery Management ICs using the ATA6870 ATA6870 1. Scope This application note describes methods of active battery cell balancing with the ATA6870. Application Note 2. Cell Balancing In a multi-cell battery pack, no two cells are identical. There are always slight differences in the state of charge, capacity, impedance and temperature characteristics —


    Original     		PDF ATA6870 ATA6870. 9184B smd transistor m6 N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477