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    S1311 Search Results

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    S1311 Price and Stock

    APEM Inc SH6S1311AKULS2

    SWITCH THUMB BCD 0.1A 40V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SH6S1311AKULS2 Tray 392 1
    • 1 $33.3
    • 10 $28.973
    • 100 $33.3
    • 1000 $23.01673
    • 10000 $23.01673
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    Mouser Electronics SH6S1311AKULS2 240
    • 1 $26.61
    • 10 $22.45
    • 100 $20.75
    • 1000 $16.93
    • 10000 $16.93
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    Newark SH6S1311AKULS2 Bulk 200
    • 1 -
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    • 100 $21.86
    • 1000 $17.61
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    Powell Electronics SH6S1311AKULS2 11 1
    • 1 $83.5
    • 10 $83.5
    • 100 $83.5
    • 1000 $53.1
    • 10000 $51.15
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    Master Electronics SH6S1311AKULS2 287
    • 1 $30.88
    • 10 $22.25
    • 100 $20.28
    • 1000 $16.35
    • 10000 $16.35
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    Honeywell Sensing and Control BES-131-111-001

    BES SERIES, 12V SUPPLY VOLTAGE,
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    DigiKey BES-131-111-001 Box 89 1
    • 1 $44.07
    • 10 $38.735
    • 100 $34.0455
    • 1000 $33.6
    • 10000 $33.6
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    Mouser Electronics BES-131-111-001 50
    • 1 $50
    • 10 $48.56
    • 100 $46.68
    • 1000 $46.68
    • 10000 $46.68
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    Newark BES-131-111-001 Bulk 30 1
    • 1 $43.54
    • 10 $38.27
    • 100 $33.63
    • 1000 $33.2
    • 10000 $33.2
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    TTI BES-131-111-001 Each 30 1
    • 1 $50
    • 10 $47.62
    • 100 $46.68
    • 1000 $46.68
    • 10000 $46.68
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    Panasonic Electronic Components MUAS13111AA

    STRETCHABLE CIRCUIT FILM 5 PACK
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    DigiKey MUAS13111AA Bag 54 1
    • 1 $183.3
    • 10 $183.3
    • 100 $142.8966
    • 1000 $142.8966
    • 10000 $142.8966
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    Master Electronics MUAS13111AA
    • 1 -
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    • 100 $132.69
    • 1000 $132.69
    • 10000 $132.69
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    Lapp Group S1311

    CABLE GLAND 4-10MM PG11 POLYAMID
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    DigiKey S1311 Bulk 1,000
    • 1 -
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    • 100 -
    • 1000 $2.16454
    • 10000 $2.16454
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    RS S1311 Bulk 174 6 Weeks 1
    • 1 $3.19
    • 10 $3.19
    • 100 $2.75
    • 1000 $2.65
    • 10000 $2.65
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    Anytek Technology Corporation Ltd TS13118C0000G

    TERM BLOCK PLUG 13POS 3.5MM
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    DigiKey TS13118C0000G Bulk 3,040
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    • 10000 $1.74641
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    TME TS13118C0000G 3,040
    • 1 -
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    • 10000 $2.15
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    Interstate Connecting Components TS13118C0000G
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    S1311 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 42 Vos 500 V fa 4A ^%>S oti 2CÌ Package Ordering Code TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit


    OCR Scan     		O-220 C67078-S1311-A2 D5155 PDF

    DS2413

    Abstract: No abstract text available
    Text: DS1310 PRELIMINARY DALLAS D S 1310/D S1311 Sup er Socket s e m ic o n d u c t o r PACKAGE OUTUNE FEATURES: • Built-in C M O S circuitry adds nonvolatile SR A M and real time dock to existing microcontroller-based de­ □ □ □ a n u □ □ □ n u □


    OCR Scan     		DS1310 1310/D S1311 40-pin DS2413 PDF

    C67078-S1311-A2

    Abstract: No abstract text available
    Text: BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 42 500 V 4A 2Ω TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		O-220 C67078-S1311-A2 C67078-S1311-A2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ffDS on Package Ordering Code BUZ 42 500 V 4A 2 Li TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit


    OCR Scan     		O-220 C67078-S1311-A2 fl235bG5 8E35bOS PDF

    C67078-S1311-A2

    Abstract: No abstract text available
    Text: BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 42 500 V 4A 2Ω TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		O-220 C67078-S1311-A2 C67078-S1311-A2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR664DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) 0.0060 at VGS = 10 V 60a 0.0075 at VGS = 6 V 60a 0.0095 at VGS = 4.5 V 54 60 Qg (Typ.) 12 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switching


    Original     		SiR664DP SiR664DP-T1-GEelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS427EDN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d, g 0.0106 at VGS = - 10 V - 50d 0.0160 at VGS = - 6 V - 42.1 0.0213 at VGS = - 4.5 V - 31.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS427EDN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB488DK www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiB488DK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS426DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS426DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7619DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7619DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiB422

    Abstract: No abstract text available
    Text: SPICE Device Model SiB422EDK www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiB422EDK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiB422 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR698DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS434DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiS434DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7405BDN www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7405BDN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7149ADP Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0052 at VGS = - 10 V - 50d 0.0095 at VGS = - 4.5 V - 50d • • • • Qg (Typ.) 43.1 nC • Material categorization: For definitions of compliance


    Original     		Si7149ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2323DDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.039 at VGS = - 4.5 V - 5.3 0.050 at VGS = - 2.5 V - 4.7 0.075 at VGS = - 1.8 V - 3.8 d Qg (Typ.) 13.6 nC APPLICATIONS TO-236 (SOT-23) G


    Original     		Si2323DDS O-236 OT-23) Si2323DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA931DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 6 V - 4.5a 0.100 at VGS = - 4.5 V - 4.5 Qg (Typ.) 4.1 nC a PowerPAK SC-70-6 Dual 1 S1 APPLICATIONS


    Original     		SiA931DJ SC-70-6 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS850EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified 60 RDS(on) () at VGS = 10 V 0.0215 RDS(on) () at VGS = 4.5 V 0.0261 ID (A) • 100 % Rg and UIS Tested


    Original     		SQS850EN AEC-Q101 SQS850EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    s-1311

    Abstract: No abstract text available
    Text: C Integrated DeviceTechnology, Inc IDT 7M656L 256K CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • H ig h -d e n sity 2 5 6 K -b it C M O S s ta tic RAM m o du le • C u sto m e r-co n fig u re d to 16Kx16, 32K x8 o r 64Kx4 • Fast a cce ss tim e s T h e ID T7M 656 Is a 256 K -b it h ig h -s p e e d C M O S sta tic RAM c o n ­


    OCR Scan     		7M656L 16Kx16, 64Kx4 IDT6167S IDT7M656L MIL-STD-883 7M656 S13-16 s-1311 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR424DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR424DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS438DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS438DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ4410EY www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SQ4410EY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR426DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR426DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF