P8212 Search Results

P8212

Abstract: LED 690 nm IR LED 800 nm LED 700 - 800 nm KPCA0008JA KPCB0021JA KPCB0022JA KPCB0023JA KPCB0024JA 850 nm LED
Contextual Info: MODULE 投／受光モジュール P8212 VICS用投／受光一体型素子 LEDアレイとフォトダイオードを一体化し小型化を実現しました。特に車載アンテナの厚さが薄くなるように、素子幅を小さくしました。ま

P8212

Abstract: KPCA0008EA KPCB0021EA KPCB0022EA KPCB0023EA KPCB0024EA SE-171
Contextual Info: MODULE Light emitting/receiving module P8212 Integrated light emitting/receiving elements for automobile VICS P8212 is a light emitting/receiving module consisting of an LED array and a photodiode in the same small package. The width of this module is minimized so that automobile antennas can be designed thin. A lens is also fitted onto the photodiode to increase

Contextual Info: MODULE Light emitting/receiving module P8212 Integrated light emitting/receiving elements for automobile VICS P8212 is a light emitting/receiving module consisting of an LED array and a photodiode in the same small package. The width of this module is minimized so that automobile antennas can be designed thin. A lens is also fitted onto the photodiode to increase

P8212

Abstract: KPCA0008EA KPCB0021EA KPCB0022EA KPCB0023EA KPCB0024EA SE-171
Contextual Info: MODULE Light emitting/receiving module P8212 Integrated light emitting/receiving elements for automobile VICS P8212 is a light emitting/receiving module consisting of an LED array and a photodiode in the same small package. The width of this module is minimized so that automobile antennas can be designed thin. A lens is also fitted onto the photodiode to increase

Contextual Info: MODULE Light emitting/receiving module P8212 Integrated light emitting/receiving elements for automobile VICS P8212 is a light emitting/receiving module consisting of an LED array and a photodiode in the same small package. The width of this module is minimized so that automobile antennas can be designed thin. A lens is also fitted onto the photodiode to increase

IC LA 4127

Abstract: la 4127 P3212 8212D
Contextual Info: Am3212 *Am8212 Eight-Bit Input/Output Port Distinctive Characteristics • F u lly parallel, 8 -b it data register and b u ffe r replacing latches, m ultiplexers and buffers needed in m icro­ processor systems. • Available fo r operation over both com m ercial and

f 8212

Contextual Info: Am8212 Eight-Bit Input/Output Port Distinctive Characteristics • Available fo r operation over both com m ercial and m ilita ry tem perature ranges. F u lly parallel, 8 -b it data register and b u ffe r replacing latches, m ultiplexe rs and buffers needed in m icro ­

Contextual Info: Siフォトダイオード 第 章 2 1 Siフォトダイオード 章 1-1 動作原理 1-2 等価回路 1-3 電流ー電圧特性 1-4 直線性 1-5 分光感度特性 1-6 ノイズ特性 1-7 感度均一性 1-8 応答速度 1-9 オペアンプとの接続

l943

Contextual Info: SOLID STATE D I V I S I O N Selection Guide Feb. 2012 LED Wide variations of Light Emitting Diodes to match various applications LIGHT EMITTING DIODES LED HAMAMATSU offers a broad lineup of light emitters such as high-power, near infrared LED. HAMAMATSU LEDs

IC 8212

Abstract: 8212D p3212 U 3212 M 3212 Buffer P8212 D8212 M8212
Contextual Info: Am3212 ‘Am8212 Eight-Bit Input/Output Port Distinctive Characteristics • Available for operation over both commercial an military temperature ranges. • Fully parallel, 8-bit data register and buffer replacing latches, multiplexers and buffers needed in micro­

D8212

Abstract: p8212 AM8212DM AM8212XC 9080A SR flip flop IC flip-flop SR
Contextual Info: Am8212 E ig h t-B it In p u t/O u tp u t P o rt Distinctive Characteristics • F u lly parallel, 8-bit data register and b uffer replacing latches, m ultiplexers and buffers needed in m icro­ processor systems. • 4 .0 V output high voltage for direct interface to M O S

P8212

Contextual Info: P8212/P8212M S3 National ÆM Semiconductor P8212/P8212M 8-Bit Input/Output Port General Description Features The P8212/P8212M is an 8-bit input/output port con­ tained in a standard 24-pin dual-in-line package. The device, which is fabricated using Schottky Bipolar technology, is

P8212

Abstract: D8212 sr flip-flop sr 5si SR flip flop IC AM8212DM AM8212XC applications sr latch 9080A
Contextual Info: Am8212 E ig h t-B it In p u t/O u tp u t P o rt Distinctive Characteristics • F u lly parallel, 8-bit data register and b uffer replacing latches, m ultiplexers and buffers needed in m icro­ processor systems. • 4 .0 V output high voltage for direct interface to M O S

Si photodiode

Contextual Info: Si photodiodes CHAPTER 02 1 Si photodiodes 1-1 Operating principle 1-2 Equivalent circuit 1-3 Current vs. voltage characteristics 1-4 Linearity 1-5 Spectral response 1-6 Noise characteristics 1-7 Sensitivity uniformity 1-8 Response speed 1-9 Connection to an op amp

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

rft katalog

Abstract: transistor vergleichsliste dl 8205 VEB mikroelektronik mikroelektronik RFT "halbleiterwerk frankfurt" DL074D katalog rft TRANSISTOR KATALOG rft mikroelektronik
Contextual Info: [fin ] D[k ä rä fs J E I S l n b r 1! Bipolare digitale Schaltkreise Low -Pow er-S chottky-TTL S c h o ttky -T T L -In te rfa c e -S e rie n il- c Bipolare digitale Schaltkreise Low-Power-Schottky-TTL Sch ott ky-TTL-l nterf a ce-Se r ie Vorwort Der vorliegende Katalog ist vor allem für Konstrukteure und Geräteentwickler

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

DL074D

Abstract: SN8400N D100D E412D sn8404n D204D E355D D410D DS8205D D147D
Contextual Info: RFT D100D E100D D103D E103D D104D E104D D108D E108D D110D E110D D120D E120D D121D E121D D122D D123D D126D E126D D130D E130D D140D E140D D146D E146D D147D E147D D150D E150D D151D E151D D153D E153D D154D E154D D160D E160D D172D E172D D174D E174D D175D E175D

Contextual Info: SOLID STATE D I V I S I O N セレクションガイド 2011.11 LED LIGHT EMITTING DIODES 幅広い用途に対応する豊富なバリエーションの発光素子 LIGHT EMITTING DIODES LED 浜松ホトニクスは高出力の近赤外LEDなどのラインアップを用意しています。

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154