NX5307
Abstract: NX5307EH NX5307EH-AZ NX5307EK NX5307EK-AZ STM-16
Text: NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5307 SERIES FOR 2.5 Gb/s INTRA-OFFICE APPLICATION FEATURES • OPTICAL OUTPUT POWER: PO = 10 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.2 ns MAX tf = 0.2 ns MAX • WIDE OPERATING TEMPERATURE RANGE:
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NX5307
STM-16
NX5307EH
NX5307EH-AZ
NX5307EK
NX5307EK-AZ
STM-16
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5307EH NX5307EK NX5504 STM-16
Text: DATA SHEET LASER DIODE NX5307 Series 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5307 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, intra-office
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NX5307
STM-16
NX5501
NX5304
NX5306
NX5307EH
NX5307EK
NX5504
STM-16
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Untitled
Abstract: No abstract text available
Text: NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5307 SERIES FOR 2.5 Gb/s INTRA-OFFICE APPLICATION FEATURES • OPTICAL OUTPUT POWER: PO = 10 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.2 ns MAX tf = 0.2 ns MAX • WIDE OPERATING TEMPERATURE RANGE:
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NX5307
STM-16
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NX5307
Abstract: NX5307EH NX5307EK STM-16
Text: PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5307 Series FOR 2.5 Gb/s INTRA-OFFICE APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 10 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.2 ns MAX
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NX5307
STM-16
NX5307EK
NX5307EH
NX5307EK
STM-16
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5307 Series 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5307 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, intra-office
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NX5307
STM-16
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
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NX5304
Abstract: NX6307 NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX5501
Text: PRELIMINARY DATA SHEET LASER DIODE NX6307 Series 1 310 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6307 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6307S Series
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NX6307
NX6307S
STM-16,
NX6307G
NX5304
NX6307GH
NX6307GK
NX6307SH
NX6307SK
STM-16
NX5501
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NX5304
Abstract: NX5306 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16
Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy
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NX5306
NX5304
NX5306EH
NX5306EK
NX5307
NX5501
NX5504
NX6306
STM-16
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NX6504SH
Abstract: NX6504SK NX5304 NX5306 NX6504 NX6504GH NX6504GK
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX5504 Series 1 550 nm FOR FTTH, 156 Mb/s, 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5504 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These
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NX5504
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6307 Series 1 310 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6307 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6307S Series
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NX6307
STM-16,
NX6307S
NX6307G
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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NX5304
Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor
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NX6306
NX6306S
NX6306G
NX5304
NX5306
NX6306GH
NX6306GK
NX6306SH
NX6306SK
inGaAs
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NX5501
Abstract: NX5304 NX5306 NX5306EH NX5306EK NX5307 NX5504 NX6306 STM-16
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
nec. 5.5 473
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NX5501
Abstract: NX5304 NX5306 NX5307 NX6509 NX6509GH NX6509GK STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX6509 Series 1 550 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are designed for 2.5 Gb/s: STM-16 (L-16.2) application and
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NX6509
STM-16
NX5501
NX5304
NX5306
NX5307
NX6509GH
NX6509GK
STM-16
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NX5304
Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series
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NX6504
NX6504S
NX6504G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series
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NX6504
NX6504S
NX6504G
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This
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NX6306
NX6306S
NX6306G
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10G EML TOSA
Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
Text: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely
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acros88-2247
04/2M
10G EML TOSA
TOSA 10G DFB
EML TOSA 25g
10G APD ROSA
TOSA 10G EML
laser DFB 1550nm 10mW
NEC TOSA 10G
10g tosa EML
25g EML TOSA
TOSA 1310 10G
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NX5501
Abstract: NX5304 NX5304EH NX5304EK NX5306 NX5307 NX5504 NX6306 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX5304 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5304 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These
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NX5304
NX5501
NX5304EH
NX5304EK
NX5306
NX5307
NX5504
NX6306
STM-16
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NX5304
Abstract: NX5304EH NX5304EK NX5306 NX5307 NX5501 NX5504 NX6306 STM-16 Laser diode Fabry-Perot
Text: DATA SHEET LASER DIODE NX5304 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5304 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed for 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1), 622 Mb/s: STM4 (I-4, S-4.1), Gigabit Ethernet application and ideal for Synchronous Digital
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NX5304
NX5304EH
NX5304EK
NX5306
NX5307
NX5501
NX5504
NX6306
STM-16
Laser diode Fabry-Perot
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