NX5501
Abstract: NX5304 NX5306 NX5307 NX6509 NX6509GH NX6509GK STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX6509 Series 1 550 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are designed for 2.5 Gb/s: STM-16 (L-16.2) application and
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NX6509
STM-16
NX5501
NX5304
NX5306
NX5307
NX6509GH
NX6509GK
STM-16
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NX6509
Abstract: NX6509GH NX6509GK STM-16
Text: PRELIMINARY DATA SHEET NEC's 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS NX6509 Series FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 10 mA • HIGH SPEED: tr = 100 ps MAX. tf = 150 ps MAX.
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NX6509
NX6509
STM-16
NX6509GH
NX6509GK
STM-16
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NX6509
Abstract: NX6509GH NX6509GH-AZ NX6509GK NX6509GK-AZ STM-16
Text: PRELIMINARY DATA SHEET NEC's 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS NX6509 Series FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 10 mA • HIGH SPEED: tr = 100 ps MAX. tf = 150 ps MAX.
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NX6509
NX6509
STM-16
NX6509GH
NX6509GH-AZ
NX6509GK
NX6509GK-AZ
STM-16
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
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NX5304
Abstract: NX6307 NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX5501
Text: PRELIMINARY DATA SHEET LASER DIODE NX6307 Series 1 310 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6307 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6307S Series
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NX6307
NX6307S
STM-16,
NX6307G
NX5304
NX6307GH
NX6307GK
NX6307SH
NX6307SK
STM-16
NX5501
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NX5304
Abstract: NX5306 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16
Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy
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NX5306
NX5304
NX5306EH
NX5306EK
NX5307
NX5501
NX5504
NX6306
STM-16
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NX6504SH
Abstract: NX6504SK NX5304 NX5306 NX6504 NX6504GH NX6504GK
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX5504 Series 1 550 nm FOR FTTH, 156 Mb/s, 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5504 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These
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NX5504
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NX5304
Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor
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NX6306
NX6306S
NX6306G
NX5304
NX5306
NX6306GH
NX6306GK
NX6306SH
NX6306SK
inGaAs
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NX5501
Abstract: NX5304 NX5306 NX5306EH NX5306EK NX5307 NX5504 NX6306 STM-16
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
nec. 5.5 473
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5307EH NX5307EK NX5504 STM-16
Text: DATA SHEET LASER DIODE NX5307 Series 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5307 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, intra-office
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NX5307
STM-16
NX5501
NX5304
NX5306
NX5307EH
NX5307EK
NX5504
STM-16
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NX5304
Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series
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NX6504
NX6504S
NX6504G
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NX5501
Abstract: NX5304 NX5304EH NX5304EK NX5306 NX5307 NX5504 NX6306 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX5304 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5304 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These
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NX5304
NX5501
NX5304EH
NX5304EK
NX5306
NX5307
NX5504
NX6306
STM-16
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NX5304
Abstract: NX5304EH NX5304EK NX5306 NX5307 NX5501 NX5504 NX6306 STM-16 Laser diode Fabry-Perot
Text: DATA SHEET LASER DIODE NX5304 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5304 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed for 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1), 622 Mb/s: STM4 (I-4, S-4.1), Gigabit Ethernet application and ideal for Synchronous Digital
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NX5304
NX5304EH
NX5304EK
NX5306
NX5307
NX5501
NX5504
NX6306
STM-16
Laser diode Fabry-Perot
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX5504EH NX5504EK NX6306 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX5504 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5504 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed and ideal for Fiber To The Home (FTTH).
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NX5504
NX5501
NX5304
NX5306
NX5307
NX5504EH
NX5504EK
NX6306
STM-16
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec. 5.5 473
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
nec. 5.5 473
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NX5304
Abstract: NX6307 NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX5501
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NX5304
Abstract: NX5306 NX5307 NX5501 NX6509 NX6509GH NX6509GK STM-16
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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