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    NX5306EK Search Results

    NX5306EK Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NX5306EK NEC 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE Original PDF
    NX5306EK NEC 1310 nm InGaAsP MQW FP laser diode for 155 Mb/s, 622 Mb/s and 1.25 Gb/s applications. Original PDF
    NX5306EK NEC NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE Original PDF

    NX5306EK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NX5304

    Abstract: NX5306 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16
    Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy


    Original     		PDF NX5306 NX5304 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16

    NX5501

    Abstract: NX5304 NX5306 NX5306EH NX5306EK NX5307 NX5504 NX6306 STM-16
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NX5306

    Abstract: NX5306EH NX5306EK
    Text: PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 Series FOR 155 Mb/s, 622 Mb/s, and 1.25 Gb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED:


    Original     		PDF NX5306 NX5306EK NX5306EH NX5306EK

    NX5306

    Abstract: NX5306EH NX5306EK
    Text: NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.3 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:


    Original     		PDF NX5306 NX5306EH NX5306EK

    STM 125

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy


    Original     		PDF NX5306 STM 125