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Microchip Technology Inc MT5C128K8A1DJ-15 Electronic Component
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MT5C128K8A1 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MT5C128K8A1513A		Micron	S13A 1 MEG SRAM DIE		Scan	PDF
MT5C128K8A1DJ-12L		Micron	128K x 8 SRAM WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT		Original	PDF
MT5C128K8A1DJ-15L		Micron	128K x 8 SRAM WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT		Original	PDF
MT5C128K8A1DJ-20L		Micron	128K x 8 SRAM WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT		Original	PDF
MT5C128K8A1DJ-25L		Micron	128K x 8 SRAM WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT		Original	PDF

MT5C128K8A1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TN-0514 Abstract: micron sram 128K x 8 sram tn0514 Text: MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM SEMICONDUCTOR, INC. SRAM 128K x 8 SRAM FEATURES • High speed: 12, 15, 20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with ?C/E and ?O/E options • Automatic ?C/E power down	Original	PDF	MT5C128K8A1 32-Pin TN-0514 micron sram 128K x 8 sram tn0514
Untitled Abstract: No abstract text available Text: MICRO N S E M I C O N D U C T O R INC b?E D • t.lllSM'l D D 0 R 3 7 ü RH2 ■ MRN PRELIMINARY MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM MICRON I S SEMICONDUCTOR. INC R A M 1 2 8 K x 8 S R A M FEATURES • H igh speed: 1 2 ,1 5 , 20 and 25ns • M ultiple center power and ground pins for greater	OCR Scan	PDF	MT5C128K8A1 32-Pin MT5C128K6A1
Untitled Abstract: No abstract text available Text: MT5C128K8A1 RE VO LU T IO NA RY PINOUT 128K x 8 SRAM M IC R O N SRAM 128Kx 8 SRAM FEATURES • High speed: 12,15,20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • Automatic CE power down	OCR Scan	PDF	MT5C128K8A1 128Kx 32-Pin
Untitled Abstract: No abstract text available Text: MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM I^IICZRON SRAM 128K x 8 SRAM FEATURES • High speed: 1 2 ,1 5 ,2 0 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options • A utom atic CE power down	OCR Scan	PDF	MT5C128K8A1 32-Pin
uPD23C4000 Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A	OCR Scan	PDF	64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Untitled Abstract: No abstract text available Text: ADVANCE SRAM 128Kx 8 SRAM WITH SINGLE CHIP ENABLE, CENTER POWER AND GROUND PINS FEATURES • High speed: 1 2 ,1 5 , 20 and 25ns • Multiple center pow er and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options • A utom atic CE power down	OCR Scan	PDF	MT5C128K8A1 128Kx 32-Pin
ci 4521 Abstract: S13A speed probe MT5LC128K8D4S13A MT5LC64K16D4S13A Text: MICRON • S 13A 1 MEG SRAM DIE SCM CONDUCTOR INC SRAM DIE 1 MEG SRAM 1 2 8 K X 8 , 6 4 K x 16 FEATURES • Single +3.3V or +5V power supply • 5V tolerant I/O • Individual byte controls for both READ and WRITE DIE OUTLINE Top View 3.3V none n /a -15*	OCR Scan	PDF	150mm C19iM. ci 4521 S13A speed probe MT5LC128K8D4S13A MT5LC64K16D4S13A
Untitled Abstract: No abstract text available Text: b llis in O0 10 l b 3 • n RN SEM CQ N O JCTO ftlM C 1 MEG SRAM p3\|E \| SRAM DIE 1 MEG SRAM 1 2 8 KX 8 , 6 4 K x 16 FEATURES DIE OUTLINE Top View • Single +3.3V or +5V power supply • 5V tolerant I/O • Individual byte controls for both READ and WRITE	OCR Scan	PDF	150mm
TC55B4257 Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264	OCR Scan	PDF	KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Untitled Abstract: No abstract text available Text: PRELIMINARY M ir - E g r - in i 1 m t 5C128K8A1 R E VO LU T IO N A R Y PINOUT 128K X 8 SRAM S R A M 1 2 8 K x 8 S R A M FEATURES • High speed: 12,1 5 , 20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options	OCR Scan	PDF	5C128K8A1 32-Pin MT5C128K8A1