MSM5116400 Search Results

MSM5116400C

Contextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

24-P-3001

Abstract: MSM5116400
Contextual Info: J2G0106-18-42 作成：1998年 4月 ¡ 電子デバイス MSM5116400C l MSM5116400C 暫定 4,194,304-Wordx4-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5116400CはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックランダム

MSM5116400F

Abstract: MSM5116400
Contextual Info: FEDD5116400F-01 1Semiconductor MSM5116400F This version: May 2001 Previous version :  4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power

MSM5116400C

Abstract: l1017
Contextual Info: Pr E2G0106-18-42 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400C is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400C achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power

irp 945

Contextual Info: O K I Semiconductor MSC23837-XXBS18/DS18 IPFIDIMI DM Iff 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23837-xxBS18/DS18 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of eighteen 16-Mb DRAMs in SOJ MSM5116400 packages mounted

Contextual Info: O K I Semiconductor MSC23441 -xxBS10/DS10 IPirgílóMÍlrDsirf 4,194,304>Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23441-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory M odule composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages m ounted with

MSM5116400D

Abstract: D-50 D-60 MSM5116400 MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
Contextual Info: Semiconductor This version:Apr.1999 MSM5116400D 4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400D is a 4,194,304-word ´ 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption

D-50

Abstract: D-60 MSM5116400 MSM5116400D MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
Contextual Info: Semiconductor This version:Apr.1999 MSM5116400D 4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400D is a 4,194,304-word ´ 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption

MSM5116400C

Contextual Info: Pr E2G0106-18-42 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400C is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400C achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSC23441 -xxBS10/DS10 [FrtlSmSuisirf 4,194,304-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23441-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages m ounted with

Contextual Info: O K I Semiconductor MSM5 116400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5116400 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5116400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116400A achieves high integration, high-speed operation, and low-power

MSM5116400B

Abstract: MSM5116400
Contextual Info: ¡ Semiconductor MSM5116400B ¡ Semiconductor MSM5116400B E2G0033-17-41 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power

M5M23160

Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Contextual Info: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1

k2624

Abstract: D-50 D-60 MSM5116400 MSM5116400D MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
Contextual Info: 作成 ：1999 年 5 月 電子デバイス M SM 5116400D 4,194,304-Word x 4-Bit DYNAMIC RAM : 高 速 ペ ー ジ モ ー ド • 概要 MSM5116400D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ

Contextual Info: E2G0106-18-42 O K I Semiconductor This,eision:Apr1998 MSM511 6 4 0 0 C_ 4,194,304-Word x 4-Bit D YNAM IC R AM : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

MSM5116400

Contextual Info: O K I Semiconductor MSC23441 -xxBS10/0S10 [PreloraHDuDSF/ 4,194,304-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23441-xxBS10/D S10 is a fully decoded 4,194,304-word x 40-bit CM OS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages mounted with

30DQ

Contextual Info: O K I Semiconductor MSC23841-XXBS20/DS20 8,388,608-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23841-xxBS20/DS20 is a fully decoded 8,388,608-word x 40-bit CMOS Dynamic Random Access Memory Module composed of twenty 16-Mb DRAMs in SOJ MSM5116400 packages mounted

MSM5116400

Abstract: MSM5116400A
Contextual Info: O K I Semiconductor MSM5116400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116400A is a 4,194,304-word x 4-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The MSM5116400A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSC23833-XXBS16/DS16 8,388,608-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23833-xxBS16/DS16 is a fully decoded 8,388,608-word x 32-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs in SOJ MSM5116400 packages m ounted

Contextual Info: O K I Semiconductor MSC23841-XXBS20/DS20 8,388,608-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23841-xxBS20/DS20 is a fully decoded 8,388,608-word x 40-bit CMOS Dynamic Random Access Memory M odule composed of twenty 16-Mb DRAMs in SOJ MSM5116400 packages m ounted

Contextual Info: O K I Semiconductor MSC 23837-xxBS 18/DS18 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23837-xxBS18/DS18 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of eighteen 16-Mb DRAMs in SOJ MSM5116400 packages mounted