MSM511 Search Results

MSM5116800C

Contextual Info: Pr E2G0110-18-42 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116800C achieves high integration, high-speed operation, and low-power

MSM5117800

Abstract: MSM5117800C
Contextual Info: E2G0112-18-42 O K I Semiconductor MSM5 1 17800 C This version: Apr. 1998 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800C achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power

MSM5116160

Abstract: dq8e N4409
Contextual Info: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er

Contextual Info: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power

MSM5118165B

Abstract: TSOP 86 Package
Contextual Info: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION MSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power

MSM5117400

Contextual Info: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.

MSM5116400C

Contextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

MSM5117405

Abstract: MSM5117405B
Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power

m51164

Abstract: MSM5116405A M5116405
Contextual Info: Um O K I Semiconductor MSM5 1 16405 A 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE W ITH EDO DESCRIPTION The MSM5116405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116405A achieves high integration, high-speed operation, and low-power

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

MSM511000

Abstract: ZIP20-P-400 msm511000h
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116160A_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM5116160A is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

MSM5116805A

Contextual Info: O K I Semiconductor MSM5 1 1 6 8 0 5 A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116805A is a2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116805A achieves high integration, high-speed operation, and low-power

MSM5117405

Abstract: MSM5117405C
Contextual Info: Pr E2G0109-18-42 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405C is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405C achieves high integration, high-speed operation, and low-power

free diode LN 4148 datasheet

Abstract: MSM5117805B
Contextual Info: ¡ Semiconductor MSM5117805B ¡ Semiconductor MSM5117805B E2G0047-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805B is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117805B achieves high integration, high-speed operation, and low-power

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

k2624

Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
Contextual Info: 作成 ：1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 MSM5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ

MSM5116180-70

Abstract: MSM5116180-80
Contextual Info: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

MSC2313A-80YS8

Contextual Info: O K I semiconductor MSC2313A-xxYS8/KS8_ 1,048,576 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2313A-xxYS8/KS8 is a fully decoded, 1,048,576 word x 8 bit CMOS dynamic random access memory composed of eight 1Mb DRAMs in SOJ MSM511000AJS . The mounting of eight SOJs

18-PIN

Abstract: 26-PIN ZIP20-P-400 MSM OKI
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The