MGP11 Search Results

MGP11 Price and Stock

Filter by Manufacturer


Motorola Semiconductor Products MGP11N60ED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGP11N60ED		1,493		5	1 - 10 $1.2375 100 $0.4641 1000 $0.3465 10000 $0.3218	Buy Now
Quest Components	MGP11N60ED		1,194			1 $1.65 10 $1.65 100 $0.495 1000 $0.429 10000 $0.429	Buy Now
onsemi MGP11N60ED Insulated Gate Bipolar Transistor, 15A, 600V, N-Channel, TO-220AB '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MGP11N60ED		178		1	1 $0.4767 10 $0.4767 100 $0.4481 1000 $0.4052 10000 $0.4052	Buy Now
Zebra Technologies DS-ZD4MGP1131371 BNDL ZD4A022-D01S00MG HOLOGIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NAC	DS-ZD4MGP1131371				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

MGP11 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
MGP11N60E	Motorola	Insulated Gate Bipolar Transistor	Original	PDF
MGP11N60E	On Semiconductor	Insulated Gate Bipolar Transistor N-Channel	Original	PDF
MGP11N60E	On Semiconductor	Insulated Gate Bipolar Transistor	Original	PDF
MGP11N60E/D	Motorola	IGBT IN TO-220 11 A	Original	PDF
MGP11N60ED	On Semiconductor	TRANS IGBT CHIP N-CH 600V 15A 3TO-220AB	Original	PDF
MGP11N60ED	On Semiconductor	Insulated Gate Bipolar Transistor N-Channel	Original	PDF
MGP11N60E-D	On Semiconductor	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate	Original	PDF
MGP11N60ED/D	Motorola	IGBT IN TO-220 11 A	Original	PDF
MGP11N60ED-D	On Semiconductor	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate	Original	PDF
MGP11N60EDG	On Semiconductor	TRANS IGBT CHIP N-CH 600V 15A 3TO-220AB	Original	PDF
MGP11N60EG	On Semiconductor	TRANS IGBT CHIP N-CH 600V 15A 3TO-220AB	Original	PDF

MGP11 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MGP11N60E Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP11N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	Original	PDF	MGP11N60E/D MGP11N60E MGP11N60E
MGP11N60ED Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGP11N60ED N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged	Original	PDF	MGP11N60ED/D MGP11N60ED MGP11N60ED
MGP11N60DE Abstract: 221A-06 Text: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO–220 11 A @ 90°C 15 A @ 25°C	Original	PDF	MGP11N60DE/D MGP11N60DE MGP11N60DE/D* MGP11N60DE 221A-06
MGP11N60ED Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGP11N60ED N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged	Original	PDF	MGP11N60ED/D MGP11N60ED MGP11N60ED
MGP11N60E Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet MGP11N60E Designer's Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	Original	PDF	MGP11N60E/D MGP11N60E MGP11N60E
MGP11N60E Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP11N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	Original	PDF	MGP11N60E/D MGP11N60E MGP11N60E
MGP11N60E Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGP11N60E N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	Original	PDF	MGP11N60E/D MGP11N60E MGP11N60E
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	PDF	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
transistor marking code 12W SOT-23 Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	PDF	SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
1N60E Abstract: N60E MGP11N60E Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI 1N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	Original	PDF	1N60E MGP11N60E 30H7G2140 WI-2447 MGP11N60UD 1N60E N60E MGP11N60E
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
MBK150 Abstract: BLF202 8830 transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification Supersedes data of 1999 Oct 20 2003 Sep 19 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A • High power gain	Original	PDF	M3D175 BLF202 OT409A OT409A SCA75 613524/02/pp14 MBK150 BLF202 8830 transistor
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT M3D175 BLF202 HF/VHF power MOS transistor Product specification Supersedes data of 1999 Oct 20 2003 Sep 19 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A • High power gain	Original	PDF	M3D175 BLF202 OT409A OT40ail SCA75 613524/02/pp14
SGH80N60RUFD Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild ()	Original	PDF	SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

tl4311 Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150 Text: SG388CH/D 2000 4 2 SG388CH/D 2000 3 2 SCILLC,2000 © 1999 “” http://onsemi.com.cn SCI LLC ./012 !"#$%&'()+,%?./14+=* )NO @ A L M N O	Original	PDF	SG388CH/D r14525 SG388CH/D tl4311 SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
11n60 Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE In sulated G ate Bipolar TVansistor with A n ti-P arallel Diode IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE	OCR Scan	PDF	MGP11N60DE/D 2PHX34714-0 11n60
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C	OCR Scan	PDF	MGP11 N60ED/D MGP11N60ED/D
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE	OCR Scan	PDF	MGP11N60ED
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	PDF	MGP11N60E/D GP11N6 21A-06 O-220AB
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C	OCR Scan	PDF	MGP11N60ED/D
ignition IGBTS Abstract: 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E Text: Chapter Four Data Sheets Table of Contents Page Page Motor Control IGBTs Power Modules MGP4N60E .4-2 MGP7N60E .4-6	OCR Scan	PDF	MGP4N60E MGP7N60E MGP11N60E MGP14N60E MGP21N60E MGP11N60ED MGP2N60D MGS05N60D MGS13002D. 05N60D. ignition IGBTS 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced	OCR Scan	PDF	GP11N60E/D
hall marking code A04 Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”	OCR Scan	PDF	2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
GP11N Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N 6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	PDF	MGP11N60E GP11N

Privacy Settings

MGP11 Search Results

MGP11 Price and Stock

Motorola Semiconductor Products MGP11N60ED

onsemi MGP11N60ED

Zebra Technologies DS-ZD4MGP1131371

MGP11 Datasheets (11)

MGP11 Datasheets Context Search

MGP11N60E

MGP11N60ED

MGP11N60DE

MGP11N60ED

MGP11N60E

MGP11N60E

MGP11N60E

STR-G6551

transistor marking code 12W SOT-23

1N60E

SSP35n03

MBK150

Untitled

SGH80N60RUFD

tl4311

11n60

Untitled

Untitled

Untitled

Untitled

ignition IGBTS

Untitled

hall marking code A04

GP11N