Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GP11N60E Search Results

    SF Impression Pixel

    GP11N60E Price and Stock

    Motorola Semiconductor Products MGP11N60ED

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MGP11N60ED 1,493 5
    • 1 -
    • 10 $1.2375
    • 100 $0.4641
    • 1000 $0.3465
    • 10000 $0.3218
    		Buy Now

    onsemi MGP11N60ED

    Insulated Gate Bipolar Transistor, 15A, 600V, N-Channel, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MGP11N60ED 178 1
    • 1 $0.4767
    • 10 $0.4767
    • 100 $0.4481
    • 1000 $0.4052
    • 10000 $0.4052
    		Buy Now

    GP11N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF GP11N60E/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


    OCR Scan     		PDF MGP11 N60ED/D MGP11N60ED/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


    OCR Scan     		PDF MGP11N60ED