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    MGFC39 Price and Stock

    Mitsubishi Electric MGFC39V7785A-56

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    Bristol Electronics MGFC39V7785A-56 54
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    Mitsubishi Electric MGFC39V6472A-56

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    Bristol Electronics MGFC39V6472A-56 10
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    Mitsubishi Electric MGFC39V5964A-61

    C BAND, GAAS, N-CHANNEL, RF POWER, JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC39V5964A-61 101
    • 1 $39
    • 10 $39
    • 100 $34.5
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    Mitsubishi Electric MGFC39V7177A-56

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC39V7177A-56 42
    • 1 $139.1528
    • 10 $118.2799
    • 100 $111.3222
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    Mitsubishi Electric MGFC39V7177-01

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC39V7177-01 4
    • 1 $220.5
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    MGFC39 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC39V3436 Mitsubishi 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V3436 Mitsubishi 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V3436A Mitsubishi 3.4-3.6 GHz band 4W internally matched GaAs FET Original PDF
    MGFC39V3742 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V3742 Unknown FET Data Book Scan PDF
    MGFC39V3742A Mitsubishi 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V3742A Mitsubishi 3.7-4.2 BAND 8W Internally Matched GaAs FET Scan PDF
    MGFC39V4450 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V4450 Unknown FET Data Book Scan PDF
    MGFC39V4450A Mitsubishi 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V4450A Mitsubishi 4.4-5.0 GHz Band 8W Internally Matched GaAs FET Scan PDF
    MGFC39V5053 Mitsubishi FET, ID 7.5 A Scan PDF
    MGFC39V5258 Mitsubishi 5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V5258 Mitsubishi 5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC39V5258 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V5258 Unknown FET Data Book Scan PDF
    MGFC39V5258A Mitsubishi 5.2-5.8 GHz band 8W internally matched GaAs FET Scan PDF
    MGFC39V5867 Mitsubishi Scan PDF
    MGFC39V5964 Mitsubishi 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC39V5964 Unknown High Frequency Device Data Book (Japanese) Scan PDF

    MGFC39 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MGFC39V5964A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V5964A MGFC39V5964A 28dBm 10MHz June/2004 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39 V 7785A e h « "* r\f! No««* " ' ”mew clW s=^<>8ton’ 7 .7 — 8 .5 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 7 8 5 A is a n in te rn a lly im p e d a n c e -m a t c h e d


    OCR Scan     		MGFC39 PDF

    MGFC39V5867

    Abstract: No abstract text available
    Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8 ~ 6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		June/2004 MGFC39V5867 75GHz MGFC39V5867 PDF

    MGFC39V3436

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V3436 MGFC39V3436 28dBm Oct-03 PDF

    fet 544 a

    Abstract: MGFC39V6471
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V6471 , o t p ,o d u c « 0 " u 6 . 4 - 7 .2 G H z BAND 8 W IN TERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V6471 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		39V6471 MGFC39V6471 fet 544 a PDF

    MGFC39V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V3742A MGFC39V3742A 28dBm 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V4450A 4.4 – 5.0 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC39V4450A MGFC39V4450A -45dBc 28dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC39V3436 MGFC39V3436 -45dBc 28dBm PDF

    MGFC39V7177A

    Abstract: 71F71
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V7177A MGFC39V7177A 28dBm 10MHz June/2004 71F71 PDF

    MGFC39V7785A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V7785A MGFC39V7785A 28dBm 10MHz PDF

    MGFC39V6472A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V6472A 6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original     		MGFC39V6472A MGFC39V6472A 28dBm 10MHz June/2004 PDF

    MGFC39V5867

    Abstract: 68 0063
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8~6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC39V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGFC39V5867 75GHz MGFC39V5867 39dBm RG-50 Ta-25deg 68 0063 PDF

    GF-8

    Abstract: MGFC39V3436
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched OUTLINE DRAWING GaAs power FET especially designed for use in 3.4 - 3.6 Unit : millimeters GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC39V3436 MGFC39V3436 18-Sep- GF-8 PDF

    049 MAKING

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGFC39V3436 MGFC39V3436 -45dBc 28dBm 25deg 18-Sep- 049 MAKING PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785 7.7 ~ 8 .5 G H z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit, millimeters inches The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8.5


    OCR Scan     		MGFC39V7785 27C102P, RV-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M 6FC39V 7177 7.1~ 7.7GH z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		6FC39V MGFC39V7177 Item-01: Item-51: 27C102P, RV-15 16-BIT) PDF

    mgfc39v5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964 6 .4 G H z BAND 8W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The MGFC39V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		GFC39V5964 MGFC39V5964 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177 7 .1 —7.7GHZ BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		MGFC39V7177 PDF

    MGFC39V4450A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V4450A 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V4450A MGFC39V4450A 28dBm 10MHz PDF

    MGFC39V6472A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V6472A 6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V6472A MGFC39V6472A 28dBm 10MHz PDF

    mitsubishi

    Abstract: 5.8GHz MGFC39V5258
    Text: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5258 5.2 ~ 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		MGFC39V5258 mitsubishi 5.8GHz MGFC39V5258 PDF

    MGFC39V3436

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V3436 MGFC39V3436 28dBm June/2004 PDF

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC39V3436 MGFC39V3436 -45dBc 28dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V6472A 6.4 – 7.2 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC39V6472A MGFC39V6472A -45dBc 28dBm PDF