MGFC39V3436 Search Results

MGFC39V3436 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC39V3436		Mitsubishi	3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC39V3436		Mitsubishi	3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC39V3436A		Mitsubishi	3.4-3.6 GHz band 4W internally matched GaAs FET		Original	PDF

MGFC39V3436 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MGFC39V3436 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFC39V3436 MGFC39V3436 28dBm Oct-03
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC39V3436 MGFC39V3436 -45dBc 28dBm
GF-8 Abstract: MGFC39V3436 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched OUTLINE DRAWING GaAs power FET especially designed for use in 3.4 - 3.6 Unit : millimeters GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC39V3436 MGFC39V3436 18-Sep- GF-8
MGFC39V3436 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFC39V3436 MGFC39V3436 28dBm June/2004
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC39V3436 MGFC39V3436 -45dBc 28dBm
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	PDF	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
MGFS45H2201G Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety	Original	PDF	H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
049 MAKING Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	PDF	MGFC39V3436 MGFC39V3436 -45dBc 28dBm 25deg 18-Sep- 049 MAKING
Untitled Abstract: No abstract text available Text: M ITSUBISHI SEM ICONDUCTO R <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 39V3436 is an internally im pedance-m atched O U T L IN E D R A W IN G G aAs pow er FET e specially designed fo r use in 3.4 - 3.6 U n it: millimeters	OCR Scan	PDF	MGFC39V3436 39V3436 -45dBc 28dBm 18-Sep-